BAS32L,115 datasheet, PDF - EEWORLD Datasheet

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BAS32L,115: DescriptionReverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1V @ 100mA; CategoryDiscrete semiconductor diode; File Size696KB，11 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com

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BAS32L,115 Overview

Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1V @ 100mA

BAS32L,115 Parametric

Parameter Name	Attribute value
Brand Name	Nexperia
Parts packaging code	MELF
Contacts	2
Manufacturer packaging code	SOD80C
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	6 weeks
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-LELF-R2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Maximum output current	0.2 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.5 W
Guideline	IEC-60134
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	30
Base Number Matches	1

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BAS32L

High-speed switching diode

Rev. 7 — 20 January 2011

Product data sheet

1. Product profile

1.1 General description

Single high-speed switching diode, fabricated in planar technology, and encapsulated in a

small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.

1.2 Features and benefits

High switching speed: t

≤

4 ns

Reverse voltage: V

≤

75 V

Repetitive peak reverse voltage: V

RRM

≤

100 V

Repetitive peak forward current: I

FRM

≤

450 mA

Small hermetically sealed glass SMD package

1.3 Applications

High-speed switching

Reverse polarity protection

1.4 Quick reference data

Table 1.

Symbol

FRM

[1]

[2]

Quick reference data

Parameter

forward current

repetitive peak forward

current

reverse voltage

forward voltage

reverse recovery time

= 100 mA

[2]

Conditions

[1]

Min

Typ

Max

200

450

1000

Unit

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

When switched from I

= 10 mA to I

= 10 mA; R

= 100

Ω;

measured at I

= 1 mA.

BAS32L,115 Related Products

	BAS32L,115	933913910135
Description	Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1V @ 100mA	DIODE GEN PURP 75V 200MA SOD80
Reach Compliance Code	compliant	compliant
Shell connection	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-LELF-R2	O-LELF-R2
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	2	2
Maximum operating temperature	200 °C	200 °C
Maximum output current	0.2 A	0.2 A
Package body material	GLASS	GLASS
Package shape	ROUND	ROUND
Package form	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	260	260
Maximum power dissipation	0.5 W	0.5 W
Maximum repetitive peak reverse voltage	100 V	100 V
Maximum reverse recovery time	0.004 µs	0.004 µs
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	WRAP AROUND	WRAP AROUND
Terminal location	END	END
Maximum time at peak reflow temperature	30	30
Base Number Matches	1	1

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