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NX3020NAKV,115

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 200mA Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 4.5Ω @ 100mA, 10V Maximum power dissipation ( Ta=25°C): 375mW Type: Dual N-channel MOSFET 2N-CH 30V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size703KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric Compare View All

NX3020NAKV,115 Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 200mA Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 4.5Ω @ 100mA, 10V Maximum power dissipation ( Ta=25°C): 375mW Type: Dual N-channel MOSFET 2N-CH 30V

NX3020NAKV,115 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C200mA
Gate-source threshold voltage1.5V @ 250uA
Drain-source on-resistance4.5Ω @ 100mA,10V
Maximum power dissipation (Ta=25°C)375mW
typeDual N-channel
NX3020NAKV
29 October 2013
30 V, 200 mA dual N-channel Trench MOSFET
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection
Low threshold voltage
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
Per transistor
V
DS
V
GS
I
D
R
DSon
drain-source voltage
gate-source voltage
drain current
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 10 V; I
D
= 100 mA; T
j
= 25 °C
[1]
Quick reference data
Parameter
Conditions
T
j
= 25 °C
Min
-
-20
-
Typ
-
-
-
Max
30
20
200
Unit
V
V
mA
Static characteristics (per transistor)
drain-source on-state
resistance
[1]
2
-
2.7
4.5
Ω
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm .

NX3020NAKV,115 Related Products

NX3020NAKV,115 934067068115 934067068315
Description Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 200mA Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 4.5Ω @ 100mA, 10V Maximum power dissipation ( Ta=25°C): 375mW Type: Dual N-channel MOSFET 2N-CH 30V MOSFET 2N-CH 30V 0.2A SOT666 MOSFET 2N-CH 30V 0.2A SOT666
Is it lead-free? - Lead free Lead free
Is it Rohs certified? - conform to conform to
Reach Compliance Code - compliant compliant
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Terminal surface - Tin (Sn) Tin (Sn)
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED

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