NX3020NAKV
29 October 2013
30 V, 200 mA dual N-channel Trench MOSFET
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
•
•
•
•
Very fast switching
Trench MOSFET technology
ESD protection
Low threshold voltage
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
Per transistor
V
DS
V
GS
I
D
R
DSon
drain-source voltage
gate-source voltage
drain current
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 10 V; I
D
= 100 mA; T
j
= 25 °C
[1]
Quick reference data
Parameter
Conditions
T
j
= 25 °C
Min
-
-20
-
Typ
-
-
-
Max
30
20
200
Unit
V
V
mA
Static characteristics (per transistor)
drain-source on-state
resistance
[1]
2
-
2.7
4.5
Ω
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm .
Nexperia
NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
S1
G1
D2
S2
G2
D1
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
1
2
3
Simplified outline
6
5
4
Graphic symbol
D1
D2
G1
G2
SOT666
S1
S2
017aaa256
6. Ordering information
Table 3.
Ordering information
Package
Name
NX3020NAKV
SOT666
Description
plastic surface-mounted package; 6 leads
Version
SOT666
Type number
7. Marking
Table 4.
Marking codes
Marking code
GB
Type number
NX3020NAKV
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per transistor
V
DS
V
GS
I
D
drain-source voltage
gate-source voltage
drain current
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; T
amb
= 100 °C
I
DM
P
tot
peak drain current
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
amb
= 25 °C
T
sp
= 25 °C
NX3020NAKV
All information provided in this document is subject to legal disclaimers.
Parameter
Conditions
T
j
= 25 °C
Min
-
-20
[1]
[1]
Max
30
20
200
120
800
260
370
1100
Unit
V
V
mA
mA
mA
mW
mW
mW
-
-
-
[2]
[1]
-
-
-
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
2 / 14
Nexperia
NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
Symbol
I
S
Per device
P
tot
T
j
T
amb
T
stg
Parameter
source current
Conditions
T
amb
= 25 °C
T
amb
= 25 °C
Min
-
Max
200
Unit
mA
Source-drain diode
total power dissipation
junction temperature
ambient temperature
storage temperature
[1]
[2]
[2]
-
-55
-55
-65
375
150
150
150
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa001
2
120
P
der
(%)
80
120
I
der
(%)
80
017aaa002
40
40
0
- 75
- 25
25
75
125
175
T
amb
(°C)
0
- 75
- 25
25
75
125
175
T
amb
(°C)
Fig. 1.
Normalized total power dissipation as a
function of ambient temperature
Fig. 2.
Normalized continuous drain current as a
function of ambient temperature
NX3020NAKV
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
3 / 14
Nexperia
NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
1
Limit R
DSon
= V
DS
/I
D
I
D
(A)
10
-1
t
p
= 1 ms
017aaa676
t
p
= 10 ms
t
p
= 100 ms
DC; T
sp
= 25 °C
10
-2
DC; T
amb
= 25 °C;
drain mounting pad 1 cm
2
10
-3
10
-1
1
10
V
DS
(V)
10
2
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
Thermal characteristics
Parameter
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
410
290
-
Max
480
340
105
Unit
K/W
K/W
K/W
R
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
2
NX3020NAKV
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
4 / 14
Nexperia
NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
10
3
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
0.33
10
2
0.2
0.1
0.05
0.02
0.01
10
10
-3
0
10
-2
10
-1
1
10
10
2
0.25
017aaa677
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
017aaa678
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
10
2
0.33
0.2
0.25
0.1
0.05
0.02
0
10
10
-3
0.01
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 1 cm
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Symbol
V
(BR)DSS
V
GSth
I
DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 150 °C
NX3020NAKV
All information provided in this document is subject to legal disclaimers.
Min
30
0.8
-
-
Typ
-
1.2
-
-
©
Max
-
1.5
1
10
Unit
V
V
µA
µA
5 / 14
Static characteristics (per transistor)
Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
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