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BUK6D120-60PX

CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size313KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet View All

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BUK6D120-60P
3 April 2018
60 V, P-channel Trench MOSFET
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Extended temperature range T
j
= 175
Side wettable flanks for optical solder inspection
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Trench MOSFET technology
AEC-Q101 qualified
3. Applications
Relay driver
High-speed line driver
High-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DS
V
GS
I
D
P
tot
R
DSon
Parameter
drain-source voltage
gate-source voltage
drain current
total power dissipation
drain-source on-state
resistance
V
GS
= -10 V; T
sp
= 25 °C
T
sp
= 25 °C
V
GS
= -10 V; I
D
= -3 A; T
j
= 25 °C
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
Typ
-
-
-
-
95
Max
-60
20
-8
15
120
Unit
V
V
A
W
Static characteristics
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