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BUK9K52-60E,115

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 16A Gate-source threshold voltage: 2.1V @ 1mA Drain-source on-resistance: 49mΩ @ 5A, 10V Maximum power dissipation (Ta =25°C): 32W Type: Dual N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size734KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

BUK9K52-60E,115 Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 16A Gate-source threshold voltage: 2.1V @ 1mA Drain-source on-resistance: 49mΩ @ 5A, 10V Maximum power dissipation (Ta =25°C): 32W Type: Dual N-channel

BUK9K52-60E,115 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C16A
Gate-source threshold voltage2.1V @ 1mA
Drain-source on-resistance49mΩ @ 5A,10V
Maximum power dissipation (Ta=25°C)32W
typeDual N-channel
BUK9K52-60E
24 February 2015
Dual N-channel 60 V, 55 mΩ logic level MOSFET
Product data sheet
1. General description
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Dual MOSFET
Q101 Compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; I
D
= 5 A; T
j
= 25 °C;
Fig. 12
Min
-
-
-
Typ
-
-
-
Max
60
16
32
Unit
V
A
W
Static characteristics FET1 and FET2
drain-source on-state
resistance
gate-drain charge
-
47.3
55
Dynamic characteristics FET1 and FET2
Q
GD
I
D
= 5 A; V
DS
= 48 V; V
GS
= 5 V;
T
j
= 25 °C;
Fig. 14; Fig. 15
-
2.3
-
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