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BC856W,115

Description
Rated power: 200mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 65V Transistor type: PNP PNP, Vceo=-65V, Ic=-100mA, hfe=125~475
CategoryDiscrete semiconductor    The transistor   
File Size157KB,10 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

BC856W,115 Overview

Rated power: 200mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 65V Transistor type: PNP PNP, Vceo=-65V, Ic=-100mA, hfe=125~475

BC856W,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging codeSOT323
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time4 weeks
Maximum collector current (IC)0.1 A
Collector-based maximum capacity5 pF
Collector-emitter maximum voltage65 V
ConfigurationSINGLE
Minimum DC current gain (hFE)125
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.65 V
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BC856W; BC857W; BC858W
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 12
2002 Feb 04
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