BGU7045
1 GHz wideband low-noise amplifier with bypass
Rev. 2 — 26 May 2014
Product data sheet
1. Product profile
1.1 General description
The BGU7045 MMIC is a 3.3 V wideband amplifier with bypass mode. It is designed
specifically for high linearity, low-noise applications over a frequency range of 40 MHz to
1 GHz. It is especially suited for Set-Top Box applications.
The LNA is housed in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Voltage supply of 3.3 V
Internally biased
Programmable between G
p
= 14 dB and bypass
Flat gain between 40 MHz and 1 GHz
Noise figure of 2.8 dB
High linearity with an IP3
O
of 29 dBm
75
input and output impedance
Power-down during bypass mode
Bypass mode current consumption < 5 mA
ESD protection > 2 kV Human Body Model (HBM) and >1.5 kV Charged Device Model
(CDM) on all pins
1.3 Applications
Terrestrial and cable Set-Top Boxes (STB)
Silicon and “Can” tuners
Personal Video Recorders (PVR) and Digital Video Recorders (DVR)
Home networking and in-house signal distribution
NXP Semiconductors
BGU7045
1 GHz wideband low-noise amplifier with bypass
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C; typical values at V
CC
= 3.3 V; Z
S
= Z
L
= 75
; R
bias
= 18
; 40 MHz
f
1
1000 MHz.
Symbol Parameter
V
CC
I
CC(tot)
T
amb
NF
P
L(1dB)
IP3
O
[1]
[2]
Conditions
RF input AC coupled
G
p
= 14 dB mode
bypass mode
[1]
[1]
Min
3.1
30
-
40
-
-
-
-
Typ Max Unit
3.3
34
3
-
2.8
2.5
13
29
3.5
38
-
+85
-
-
-
-
V
mA
mA
C
dB
dB
dBm
dBm
supply voltage
total supply current
ambient temperature
noise figure
output power at 1 dB gain
compression
output third-order intercept point
G
p
= 14 dB mode
bypass mode
G
p
= 14 dB mode;
1 GHz
G
p
= 14 dB mode
[1]
[1]
[1]
[1][2]
Mode depends on setting of V
CTRL
; see
Table 8.
The fundamental frequency (f
1
) is 1000 MHz. The intermodulation product (IM3) is 2
f
2
f
1
, where
f
2
= f
1
1 MHz. Input power P
i
=
10
dBm.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
RF_OUT
V
CC
n.c.
CTRL
GND
RF_IN
1
2
3
5
4
sym141
Simplified outline
6
5
4
Graphic symbol
3
2
6
1
3. Ordering information
Table 3.
Ordering information
Package
Name
BGU7045
-
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4.
BGU7045
Marking codes
Marking code
LK*
Description
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
Type number
BGU7045
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 26 May 2014
2 of 11
NXP Semiconductors
BGU7045
1 GHz wideband low-noise amplifier with bypass
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
V
CTRL
I
CC(tot)
P
tot
P
i
T
stg
T
j
T
amb
V
ESD
Parameter
supply voltage
voltage on CTRL pin
total supply current
total power dissipation
input power
storage temperature
junction temperature
ambient temperature
electrostatic discharge
voltage
Human Body Model (HBM);
according to JEDEC standard
22-A114E
Charged Device Model (CDM);
according to JEDEC standard
22-C101B
[1]
[2]
V
CTRL
must not exceed V
CC
; I
CTRL
must be limited to 5 mA (maximum).
T
sp
is the temperature at the solder point of the ground lead.
Conditions
RF input AC coupled
[1]
Min Max
0.6
3.5
0
-
-
-
65
-
40
2
V
CC
60
250
20
+150
150
+85
-
Unit
V
V
mA
mW
dBm
C
C
C
kV
T
sp
100
C
single tone
[2]
1.5
-
kV
Remark:
V
CTRL
must not exceed V
CC
; I
CTRL
must be limited to a maximum of 5 mA.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
[1]
Typ
130
Unit
K/W
Determined by final element method simulation with device mounted on application board and in still air.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
C; typical values at V
CC
= 3.3 V; Z
S
= Z
L
= 75
; R
bias
= 18
; 40 MHz
f
1
1000 MHz.
Symbol Parameter
V
CC
I
CC(tot)
s
21
2
SL
sl
FL
NF
supply voltage
total supply current
insertion power gain
slope straight line
flatness of frequency response
noise figure
Conditions
RF input AC coupled
G
p
= 14 dB mode
bypass mode
G
p
= 14 dB mode
bypass mode
G
p
= 14 dB mode
G
p
= 14 dB mode
G
p
= 14 dB mode
bypass mode
BGU7045
All information provided in this document is subject to legal disclaimers.
Min
3.1
[1]
[1]
[1]
[1]
Typ
3.3
34
3
14
2
1
0.2
2.8
2.5
Max Unit
3.5
38
-
-
-
-
-
-
-
V
mA
mA
dB
dB
dB
dB
dB
dB
30
-
-
-
-
-
[1]
[1]
-
-
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 26 May 2014
3 of 11
NXP Semiconductors
BGU7045
1 GHz wideband low-noise amplifier with bypass
Table 7.
Characteristics
…continued
T
amb
= 25
C; typical values at V
CC
= 3.3 V; Z
S
= Z
L
= 75
; R
bias
= 18
; 40 MHz
f
1
1000 MHz.
Symbol Parameter
RL
in
RL
out
P
L(1dB)
IP3
O
input return loss
output return loss
output power at 1 dB gain
compression
output third-order intercept point
Conditions
G
p
= 14 dB mode
bypass mode
G
p
= 14 dB mode
bypass mode
G
p
= 14 dB mode;
1 GHz
G
p
= 14 dB mode
bypass mode
[1]
[2]
Mode depends on setting of V
CTRL
; see
Table 8.
The fundamental frequency (f
1
) is 1000 MHz. The intermodulation product (IM3) is 2
f
2
f
1
, where
f
2
= f
1
1 MHz. Input power P
i
=
10
dBm.
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
Typ
20
9
12
10
13
29
27
Max Unit
-
-
-
-
-
-
-
dB
dB
dB
dB
dBm
dBm
dBm
[1][2]
[1][2]
Table 8.
Gain selection (pin CTRL)
10
C
T
amb
+70
C; recommended power-up condition: V
CTRL
= logic 0 or < 0.7 V.
V
CTRL
(V)
0.7
1.5
Mode
bypass
G
p
= 14 dB
Remark:
V
CTRL
must not exceed V
CC
; I
CTRL
must be limited to a maximum of 5 mA.
BGU7045
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 26 May 2014
4 of 11
NXP Semiconductors
BGU7045
1 GHz wideband low-noise amplifier with bypass
8. Application information
Other applications are possible. Please contact your local sales representative for more
information. Application notes are available on the NXP website.
8.1 Application circuit
V
CC
C5
C4
n.c.
3
X1
C1
R1 = Rbias
2
6
4
C3
1
L1
C2
X2
RF_IN
RF_OUT
5
R2
CTRL
001aam383
Components are listed in
Table 9.
Fig 1.
BGU7045 application circuit
All control and supply lines must be decoupled properly. The decoupling capacitors must
be placed as close to the device as possible.
8.2 Application circuit board layout
CTRL
GND
GND
GND
VCC
GAIN CTRL
VCC
C5
X2
BPCTRL
C3
X1
R2
C4
R1
L1
C2
RF_IN
C1
RF_OUT
001aan459
PCB material = FR4.
PCB thickness = 1.6 mm.
PCB size = 30 mm
30 mm.
r
= 4.5; thickness of copper layer = 35
m.
Components are listed in
Table 9.
Fig 2.
BGU7045
BGU7045 application circuit board layout
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 26 May 2014
5 of 11
Mobile and portable
京公网安备 11010802033920号
EEWORLD
