BAV99L, SBAV99L
Dual Series
Switching Diode
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(Each Diode)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
t = 1.0
ms
t = 1.0 ms
t = 1.0 s
Symbol
V
R
I
F
I
FM(surge)
V
RRM
I
F(AV)
I
FRM
I
FSM
2.0
1.0
0.5
1
A7 = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Value
100
215
500
100
715
450
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
A7 MG
G
ANODE
1
CATHODE
2
CASE 318
SOT−23
STYLE 11
www.onsemi.com
3
CATHODE/ANODE
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR− 5 Board (Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−65 to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
BAV99LT1G
SBAV99LT1G
BAV99LT3G
SBAV99LT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
1. FR− 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 12
Publication Order Number:
BAV99LT1/D
BAV99L, SBAV99L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
3X
b
T
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
INCHES
DIM
MIN
NOM
MAX
MIN
NOM
MAX
0.039
0.044
A
0.89
1.00
1.11
0.035
0.002
0.004
A1
0.01
0.06
0.10
0.000
0.017
0.020
b
0.37
0.44
0.50
0.015
0.006
0.008
c
0.08
0.14
0.20
0.003
0.114
0.120
D
2.80
2.90
3.04
0.110
0.051
0.055
E
1.20
1.30
1.40
0.047
0.075
0.080
e
1.78
1.90
2.04
0.070
0.017
0.022
L
0.30
0.43
0.55
0.012
0.35
0.54
0.69
0.014
0.021
0.027
L1
H
E
2.10
2.40
2.64
0.083
0.094
0.104
T
0
°
−−−
10
°
0
°
−−−
10
°
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
c
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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3
BAV99LT1/D
Microchip MCU
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