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BAV99LT3G

Description
Reverse recovery time (trr): 6ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 215mA Forward voltage drop (Vf): 1.25V @ 150mA 100V, 215mA, trr=6ns, VF=1.25 V@150mA
CategoryDiscrete semiconductor    diode   
File Size67KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BAV99LT3G Overview

Reverse recovery time (trr): 6ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 215mA Forward voltage drop (Vf): 1.25V @ 150mA 100V, 215mA, trr=6ns, VF=1.25 V@150mA

BAV99LT3G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionHALOGEN FREE AND ROHS COMPLIANT, 318-08, 3 PIN
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time8 weeks
Samacsys DescriptionDiode Switching Dual 70V 0.7A 6ns SOT-23 ON Semi BAV99LT3G, Dual SMT Switching Diode, Series, 70V 715mA, 6ns, 3-Pin SOT-23
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.715 V
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current2 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.215 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.225 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Base Number Matches1
BAV99L, SBAV99L
Dual Series
Switching Diode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(Each Diode)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
t = 1.0
ms
t = 1.0 ms
t = 1.0 s
Symbol
V
R
I
F
I
FM(surge)
V
RRM
I
F(AV)
I
FRM
I
FSM
2.0
1.0
0.5
1
A7 = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Value
100
215
500
100
715
450
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
A7 MG
G
ANODE
1
CATHODE
2
CASE 318
SOT−23
STYLE 11
www.onsemi.com
3
CATHODE/ANODE
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR− 5 Board (Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−65 to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
BAV99LT1G
SBAV99LT1G
BAV99LT3G
SBAV99LT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
1. FR− 5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 12
Publication Order Number:
BAV99LT1/D

BAV99LT3G Related Products

BAV99LT3G BAV99LT1G SBAV99LT1G
Description Reverse recovery time (trr): 6ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 215mA Forward voltage drop (Vf): 1.25V @ 150mA 100V, 215mA, trr=6ns, VF=1.25 V@150mA Reverse recovery time (trr): 6ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 215mA Forward voltage drop (Vf): 1.25V @ 150mA 100V, 215mA, trr=6ns, VF=1.25 V@150mA,PD=225mW Reverse recovery time (trr): 6ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 215mA Forward voltage drop (Vf): 1.25V @ 150mA
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free
Maker ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code SOT-23 SOT-23 SOT-23
package instruction HALOGEN FREE AND ROHS COMPLIANT, 318-08, 3 PIN R-PDSO-G3 HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
Contacts 3 3 3
Manufacturer packaging code 318-08 318-08 318-08
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Factory Lead Time 8 weeks 1 week 5 weeks
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.715 V 0.715 V 0.715 V
JEDEC-95 code TO-236 TO-236 TO-236
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Maximum non-repetitive peak forward current 2 A 2 A 2 A
Number of components 2 2 2
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C
Maximum output current 0.215 A 0.215 A 0.215 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 NOT SPECIFIED
Maximum power dissipation 0.225 W 0.225 W 0.225 W
Maximum repetitive peak reverse voltage 100 V 100 V 100 V
Maximum reverse recovery time 0.006 µs 0.006 µs 0.006 µs
surface mount YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 NOT SPECIFIED
Base Number Matches 1 1 1
Samacsys Description Diode Switching Dual 70V 0.7A 6ns SOT-23 ON Semi BAV99LT3G, Dual SMT Switching Diode, Series, 70V 715mA, 6ns, 3-Pin SOT-23 - Dual SMT Switching Diode, Series, 70V 715mA, 6ns, 3-pin SOT-23
Certification status Not Qualified Not Qualified -
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