BCW68GL
General Purpose Transistor
PNP Silicon
Features
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−45
−60
−5.0
−800
Unit
Vdc
Vdc
Vdc
1
3
mAdc
SOT−23
CASE 318
STYLE 6
2
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
Unit
mW
mW/°C
°C/W
mW
DG
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
DG MG
G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
BCW68GLT1G,
NSVBCW68GLT1G
BCW68GLT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape &
Reel
10000 / Tape &
Reel
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
November, 2016 − Rev. 8
Publication Order Number:
BCW68GLT1/D
BCW68GL
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −10 mAdc, I
B
= 0)
Collector−Emitter Breakdown Voltage
(I
C
= −10
mAdc,
V
EB
= 0)
Emitter−Base Breakdown Voltage
(I
E
= −10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= −45 Vdc, I
E
= 0)
(V
CE
= −45 Vdc, I
B
= 0, T
A
= 150°C)
Emitter Cutoff Current (V
EB
= −4.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −300 mAdc, V
CE
= −1.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= −500 mAdc, I
B
= −50 mAdc)
Base−Emitter Saturation Voltage
(I
C
= −500 mAdc, I
B
= −50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −20 mAdc, V
CE
= −10 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Noise Figure
(I
C
= −0.2 mAdc, V
CE
= −5.0 Vdc, R
S
= 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
f
T
C
obo
C
ibo
N
F
100
−
−
−
−
−
−
−
−
18
105
10
MHz
pF
pF
dB
h
FE
120
160
60
V
CE(sat)
V
BE(sat)
−
−
−
−
−
−
−
400
−
−
−0.7
−2.0
Vdc
Vdc
−
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CES
−
−
I
EBO
−
−
−
−
−20
−10
−20
nAdc
mAdc
nAdc
−45
−60
−5.0
−
−
−
−
−
−
Vdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
BCW68GL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
3X
b
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent− Marking.pdf.
ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
◊
www.onsemi.com
5
BCW68GLT1/D
京公网安备 11010802033920号
EEWORLD
