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RB520S30T1G

Description
DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 600mV @ 200mA 30V 200mA VF=600mV@200mA
CategoryDiscrete semiconductor    diode   
File Size49KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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RB520S30T1G Overview

DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 600mV @ 200mA 30V 200mA VF=600mV@200mA

RB520S30T1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionHALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 502-01, 2 PIN
Contacts2
Manufacturer packaging code502-01
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys DescriptionSchottky Barrier Diode
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.6 V
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
RB520S30T1G,
RB520S30T5G
Schottky Barrier Diode
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
www.onsemi.com
Extremely Fast Switching Speed
Extremely Low Forward Voltage 0.6 V (max) @ I
F
= 200 mA
Low Reverse Current
ESD Rating: Class 3B per Human Body Model
Class C per Machine Model
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current DC
Symbol
V
R
I
F
Value
30
200
Unit
Vdc
mA
30 VOLT SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2
1
SOD−523
CASE 502
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Non−Repetitive Peak Forward
Current, t
p
< 10 msec
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
Thermal Resistance,
Junction−to−Ambient
1. FR−5 Minimum Pad.
Symbol
P
D
Max
200
1.57
R
qJA
T
J
, T
stg
I
FSM
I
FRM
R
qJA
635
−55 to +150
600
300
635
Unit
mW
mW/°C
°C/W
°C
mA
mA
1
5J M
G
G
2
5J = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation position may vary depending
upon manufacturing location.
ORDERING INFORMATION
°C/W
Device
RB520S30T1G
Package
SOD−523
(Pb−Free)
SOD−523
(Pb−Free)
Shipping
4 mm Pitch
3000/Tape & Reel
2 mm Pitch
8000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Leakage
(V
R
= 10 V)
Forward Voltage
(I
F
= 200 mA)
Symbol
I
R
V
F
Min
Typ
Max
1.0
0.60
Unit
mA
Vdc
RB520S30T5G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
1
August, 2017 − Rev. 11
Publication Order Number:
RB520S30T1/D

RB520S30T1G Related Products

RB520S30T1G RB520S30T5G RB520S30
Description DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 600mV @ 200mA 30V 200mA VF=600mV@200mA DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 600mV @ 200mA 30V, 200mA DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 600mV @ 200mA 30V, 200mA
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free
Maker ON Semiconductor ON Semiconductor ON Semiconductor
package instruction HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 502-01, 2 PIN HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 502-01, 2 PIN R-PDSO-F2
Manufacturer packaging code 502-01 502-01 502-01
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Factory Lead Time 1 week 10 weeks 1 week
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.6 V 0.6 V 0.6 V
JESD-30 code R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 0.2 A 0.2 A 0.2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 30 V 30 V 30 V
surface mount YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 NOT SPECIFIED NOT SPECIFIED
Contacts 2 2 -
Samacsys Description Schottky Barrier Diode Diode Schottky 30V 0.2A Automotive 2-Pin SOD-523 T/R -
Maximum power dissipation 0.2 W 0.2 W -
Certification status Not Qualified - Not Qualified
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