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SMMSD4148T1G

Description
Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1V @ 10mA
CategoryDiscrete semiconductor    diode   
File Size56KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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SMMSD4148T1G Overview

Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1V @ 10mA

SMMSD4148T1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionR-PDSO-G2
Contacts2
Manufacturer packaging code425-04
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys DescriptionDiodes - General Purpose, Power, Switching HI SPD SWTH DIODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.425 W
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MMSD4148, SMMSD4148
Switching Diode
Features
SOD−123 Surface Mount Package
High Breakdown Voltage
Fast Speed Switching Time
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Forward Current
Forward Surge Current
(Note 1)
t < 1 sec
t = 1
msec
Symbol
V
R
I
F
I
FSM
I
FRM
T
J
, T
stg
Value
100
200
1.0
2.0
0.5
−55 to
+150
Unit
V
mA
A
A
°C
www.onsemi.com
SOD−123
CASE 425
STYLE 1
1
CATHODE
2
ANODE
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
Operating and Storage Junction Temperature
Range
MARKING DIAGRAM
1
5I M
G
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Typical Values
5I
M
G
= Device Code
= Date Code
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
2. FR−5 = 1.0 oz Cu, 1.0 in
z
pad
Symbol
P
D
Max
425
3.4
R
qJA
290
Unit
mW
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
10,000 /
Tape & Reel
mW/°C
°C/W
MMSD4148T1G
SMMSD4148T1G*
MMSD4148T3G
SMMSD4148T3G*
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
June, 2016 − Rev. 13
Publication Order Number:
MMSD4148T1/D

SMMSD4148T1G Related Products

SMMSD4148T1G MMSD4148T3G
Description Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1V @ 10mA Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1V @ 10mA 100V, 200mA, trr=4ns, VF=1V@ 10mA,PD=425mW
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free
package instruction R-PDSO-G2 HALOGEN FREE AND ROHS COMPLIANT, CASE 425-04, 2 PIN
Contacts 2 2
Manufacturer packaging code 425-04 425-04
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Factory Lead Time 1 week 1 week
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V
JESD-30 code R-PDSO-G2 R-PDSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 0.2 A 0.2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Maximum power dissipation 0.425 W 0.425 W
Maximum repetitive peak reverse voltage 100 V 100 V
Maximum reverse recovery time 0.004 µs 0.004 µs
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED 40
Base Number Matches 1 1

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