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BC846BDW1T1G

Description
Rated power: 380mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 65V Transistor type: 2 NPN (double) Dual NPN, 45V, 100mA
CategoryDiscrete semiconductor    The transistor   
File Size104KB,11 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC846BDW1T1G Overview

Rated power: 380mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 65V Transistor type: 2 NPN (double) Dual NPN, 45V, 100mA

BC846BDW1T1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeSC-88
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Manufacturer packaging code419B-02
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys DescriptionNULL
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage65 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.38 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BC846BDW1, BC847BDW1,
BC848CDW1
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
www.onsemi.com
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current −
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
(4)
(3)
SOT−363/SC−88
CASE 419B
STYLE 1
(2)
(1)
Q
1
Q
2
(5)
(6)
MARKING DIAGRAM
6
1x MG
G
1
1x
x
M
G
= Specific Device Code
= B, F, G, L
= Date Code
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR− 5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
Range
1. FR−5 = 1.0 x 0.75 x 0.062 in
Symbol
P
D
Max
380
250
3.0
R
qJA
T
J
, T
stg
328
−55 to +150
°C
Unit
mW
mW
mW/°C
°C/W
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2015
1
August, 2016 − Rev. 11
Publication Order Number:
BC846BDW1T1/D

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Description Rated power: 380mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 65V Transistor type: 2 NPN (double) Dual NPN, 45V, 100mA Bipolar Transistors - BJT 100mA 50V Dual NPN Rated power: 380mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 45V Transistor type: 2 NPN (double) Double NPN Rated power: 380mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 45V Transistor type: 2 NPN (dual) Rated power: 380mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 65V Transistor type: 2 NPN (dual)
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6 6 6 6 6
Manufacturer packaging code 419B-02 419B-02 419B-02 419B-02 419B-02 419B-02
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Factory Lead Time 1 week 8 weeks 1 week 8 weeks 8 weeks 8 weeks
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 65 V 45 V 45 V 45 V 45 V 65 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 200 420 200 420 200 200
JESD-30 code R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
JESD-609 code e3 e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1 1
Number of components 2 2 2 2 2 2
Number of terminals 6 6 6 6 6 6
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.38 W 0.38 W 0.38 W 0.38 W 0.38 W 0.38 W
surface mount YES YES YES YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Maker ON Semiconductor - ON Semiconductor - ON Semiconductor ON Semiconductor
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