3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface mounted on FR4 board using the minimum recommended pad size
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown
Voltage
Drain−to−Source Breakdown
Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
GS
= 0 V, I
D
= 250
mA
I
D
= 250
mA,
Reference to 25°C
V
GS
= 0 V,
V
DS
= 16 V
T
J
= 25°C
T
J
= 125°C
20
18
1.0
2.0
±0.5
mA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
±4.5
V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
0.45
2.4
1.2
V
mV/°C
V
GS
= 4.5 V, I
D
= 890 mA
V
GS
= 2.5 V, I
D
= 780 mA
V
GS
= 1.8 V, I
D
= 700 mA
V
GS
= 1.5 V, I
D
= 200 mA
0.20
0.26
0.43
0.56
1.6
0.35
0.45
0.65
1.2
W
Forward Transconductance
g
FS
V
DS
= 10 V, I
D
= 800 mA
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V
DS
= 16 V
79
13
9.0
120
20
15
pF
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V
(Note 6)
Turn On Delay Time
Rise Time
TurnOff Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 500 mA,
R
G
= 10
W
6.7
4.8
17.3
7.4
ns
DRAIN SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, I
S
= 350 mA
T
J
= 25°C
0.75
8.1
6.4
1.7
3.0
nC
1.2
V
ns
V
GS
= 0 V, d
ISD
/d
t
= 100 A/ms,
I
S
= 1.0 A, V
DD
= 20 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width = 300
ms,
duty cycle = 2%
6. Switching characteristics are independent of operating junction temperatures
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2
NTK3134N
TYPICAL CHARACTERISTICS
2.0
2.0 V
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5 V to 2.2 V
1.5
1.8 V
1.0
T
J
= 25°C
1.6 V
0.5
1.5 V
1.4 V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0
0.75
1.0
1.25
V
DS
≥
5 V
1.5
2.0
1.0
T
J
= 25°C
0.5
T
J
= 125°C
T
J
= −55°C
1.5
1.75
2.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
1.50
1.25
1.00
0.75
0.50
0.25
0
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
V
GS
, GATE VOLTAGE (V)
I
D
= 0.89 A
T
J
= 25°C
0.30
Figure 2. Transfer Characteristics
T
J
= 25°C
0.28
0.25
0.23
0.20
0.18
0.15
0.3
0.6
0.8
1.1
1.3
1.6
1.8
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5 V
V
GS
= 2.5 V
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
10,000
0.6
0.5
V
GS
= 1.8 V, I
D
= 710 mA
0.4
0.3
0.2
0.1
−60 −35
V
GS
= 4.5 V, I
D
= 1 A
−10
15
40
65
90
115
140
10
V
GS
= 2.5 V, I
D
= 710 mA
V
GS
= 1.5 V, I
D
= 200 mA
I
DSS
, LEAKAGE (nA)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
1000
T
J
= 150°C
T
J
= 125°C
100
5.0
10
15
20
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTK3134N
TYPICAL CHARACTERISTICS
140
120
C, CAPACITANCE (pF)
100
80
60
40
C
oss
20
C
rss
0
0
2
4
6
8
10
12
14
16
18
20
DRAIN−TO−SOURCE VOLTAGE (V)
1
1
10
R
G
, GATE RESISTANCE (W)
100
C
iss
t, TIME (ns)
t
d(off)
10
t
d(on)
t
r
t
f
V
GS
= 0 V
T
J
= 25°C
100
V
DD
= 10 V
I
D
= 500 mA
V
GS
= 4.5 V
Figure 7. Capacitance Variation
1.0
0.9
I
S
, SOURCE CURRENT (A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.3
0.4
0.5
0.6
0.7
V
GS
= 0 V
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
150°C
125°C
25°C
T
J
= −55°C
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
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4
NTK3134N
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
−X−
D
b1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
DIM
A
b
b1
C
D
E
e
H
E
L
L2
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
A
−Y−
E
1
2
2X
H
E
b
0.08 X Y
C
SIDE VIEW
2X
e
TOP VIEW
3X
1
L
3X
L2
BOTTOM VIEW
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X
PACKAGE
OUTLINE
0.27
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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