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NGTB40N135IHRWG

Description
Collector current (Ic) (maximum value): 80A Collector-emitter breakdown voltage (maximum value): 1350V Type: Trench type Field cutoff Vce (on) at different Vge, Ic: 2.7V @ 15V, 40A Gate Threshold voltage-VGE(th): 6.5V @ 250uA
CategoryDiscrete semiconductor    IGBT tube   
File Size177KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

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NGTB40N135IHRWG Overview

Collector current (Ic) (maximum value): 80A Collector-emitter breakdown voltage (maximum value): 1350V Type: Trench type Field cutoff Vce (on) at different Vge, Ic: 2.7V @ 15V, 40A Gate Threshold voltage-VGE(th): 6.5V @ 250uA

NGTB40N135IHRWG Parametric

Parameter NameAttribute value
Collector current (Ic) (maximum value)80A
Collector-emitter breakdown voltage (maximum value)1350V
typeTrench type field cutoff
Vce (on) when different Vge, Ic2.7V @ 15V,40A
Gate threshold voltage-VGE(th)6.5V @ 250uA
NGTB40N135IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features
http://onsemi.com
Extremely Efficient Trench with Fieldstop Technology
1350 V Breakdown Voltage
Optimized for Low Losses in IH Cooker Application
Reliable and Cost Effective Single Die Solution
These are Pb−Free Devices
40 A, 1350 V
V
CEsat
= 2.40 V
E
off
= 1.30 mJ
C
Typical Applications
Inductive Heating
Consumer Appliances
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ T
C
= 25°C
@ T
C
= 100°C
Pulsed collector current, T
pulse
limited by T
Jmax
, 10
ms
Pulse,
V
GE
= 15 V
Diode forward current
@ T
C
= 25°C
@ T
C
= 100°C
Diode pulsed current, T
pulse
limited
by T
Jmax
, 10
ms
Pulse, V
GE
= 0 V
Gate−emitter voltage
Transient Gate−emitter Voltage
(T
pulse
= 5
ms,
D < 0.10)
Power Dissipation
@ T
C
= 25°C
@ T
C
= 100°C
Operating junction temperature
range
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Symbol
V
CES
I
C
Value
1350
80
40
120
Unit
V
A
G
A
C
G
E
I
CM
E
TO−247
CASE 340AL
I
F
80
40
120
$20
±25
A
MARKING DIAGRAM
I
FM
V
GE
A
V
40N135IHR
AYWWG
P
D
394
197
−40
to +175
−55
to +175
260
W
T
J
T
stg
T
SLD
°C
°C
°C
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
NGTB40N135IHRWG
Package
TO−247
(Pb−Free)
Shipping
30 Units / Rail
©
Semiconductor Components Industries, LLC, 2014
January, 2014
Rev. 1
1
Publication Order Number:
NGTB40N135IHR/D
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