Reverse recovery time (trr): 150ns DC reverse withstand voltage (Vr): 250V Average rectified current (Io): 400mA Forward voltage drop (Vf): 1.25V @ 200mA Common cathode, 250V, 400mA
Reverse recovery time (trr): 150ns DC reverse withstand voltage (Vr): 250V Average rectified current (Io): 400mA Forward voltage drop (Vf): 1.25V @ 200mA Common cathode, 250V, 400mA
Thermal Reference, Junction−to−Anode Lead (Note 1)
Thermal Reference, Junction−to−Case (Note 1)
Total Device Dissipation (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Reference, Junction−to−Anode Lead (Note 2)
Thermal Reference, Junction−to−Case (Note 2)
DUAL HEATED
(Note 3)
Total Device Dissipation (Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Reference, Junction−to−Anode Lead (Note 1)
Thermal Reference, Junction−to−Case (Note 1)
Total Device Dissipation (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Reference, Junction−to−Anode Lead (Note 2)
Thermal Reference, Junction−to−Case (Note 2)
Junction and Storage Temperature Range
1. FR-4 @ 100 mm
2
, 1 oz. copper traces, still air.
2. FR-4 @ 500 mm
2
, 2 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels
P
D
R
qJA
R_ψ
JL
R_ψ
JC
P
D
R
qJA
R_ψ
JL
R_ψ
JC
T
J
, T
stg
390
3.1
321
159
138
540
4.3
231
148
119
−55
to +150
mW
mW/°C
°C/W
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
°C/W
°C
P
D
R
qJA
R_ψ
JL
R_ψ
JC
P
D
R
qJA
R_ψ
JL
R_ψ
JC
265
2.1
472
263
289
345
2.7
362
251
250
mW
mW/°C
°C/W
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
°C/W
Symbol
Max
Unit
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 200 Vdc)
(V
R
= 200 Vdc, T
J
= 150°C)
Reverse Breakdown Voltage
(I
BR
= 100
mAdc)
Forward Voltage
(I
F
= 100 mAdc)
(I
F
= 200 mAdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Reverse Recovery Time
(I
F
= I
R
= 30 mAdc, R
L
= 100
W)
I
R
−
−
250
0.1
100
−
mAdc
Symbol
Min
Max
Unit
V
(BR)
V
F
Vdc
mV
−
−
−
−
1000
1250
5.0
150
C
T
t
rr
pF
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BAV23CL, NSVBAV23CL
1
I
F
, FORWARD CURRENT (mA)
I
r
, REVERSE CURRENT (mA)
100
10
1
0.1
0.01
0.001
0.0001
25°C
0°C
−40°C
0
50
100
150
200
250
V
R
, REVERSE VOLTAGE (V)
150°C
125°C
75°C
0.1
−40°C
0°C
25°C
0.01
150°C
0.4
0.6
0.8
1.0
1.2
75°C
125°C
0.001
0.2
1.4
V
F
, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
3.0
C
T
, TOTAL CAPACITANCE (pF)
2.5
2.0
1.5
1.0
0.5
0
Figure 2. Reverse Current
T
A
= 25°C
f = 1 MHz
0
5
10
15
20
25
30
35
40
V
R
, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
820
W
+10 V
2.0 k
100
mH
0.1
mF
D.U.T.
50
W
OUTPUT
PULSE
GENERATOR
50
W
INPUT
SAMPLING
OSCILLOSCOPE
V
R
INPUT SIGNAL
90%
I
R
i
R(REC)
= 3.0 mA
OUTPUT PULSE
(I
F
= I
R
= 30 mA; MEASURED
at i
R(REC)
= 3.0 mA)
I
F
0.1
mF
t
r
10%
t
p
t
I
F
t
rr
t
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 30 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 30 mA.
Notes:
3. t
p
» t
rr
Figure 4. Recovery Time Equivalent Test Circuit
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3
BAV23CL, NSVBAV23CL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
L1
VIEW C
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
3X
b
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
0.90
3X
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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