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BCP53T1G

Description
Rated power: 1.5W Collector current Ic: 1.5A Collector-emitter breakdown voltage Vce: 80V Transistor type: PNP PNP, Vceo=-80V, Ic=1.5A
CategoryDiscrete semiconductor    The transistor   
File Size69KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BCP53T1G Overview

Rated power: 1.5W Collector current Ic: 1.5A Collector-emitter breakdown voltage Vce: 80V Transistor type: PNP PNP, Vceo=-80V, Ic=1.5A

BCP53T1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeTO-261AA
package instructionTO-261, 4 PIN
Contacts4
Manufacturer packaging code0.0318
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time8 weeks
Shell connectionCOLLECTOR
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-261AA
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1
BCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT−223 package
which is designed for medium power surface mount applications.
High Current
NPN Complement is BCP56
The SOT−223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
Device Marking:
BCP53T1G = AH
BCP53−10T1G = AH−10
BCP53−16T1G = AH−16
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= 25°C (Note 1)
Derate above 25°C
Operating and Storage
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
1.5
12
T
J
, T
stg
−65 to +150
W
mW/°C
°C
Value
−80
−100
−5.0
1.5
Unit
Vdc
Vdc
Vdc
Adc
www.onsemi.com
MEDIUM POWER HIGH
CURRENT SURFACE MOUNT
PNP TRANSISTORS
COLLECTOR 2, 4
1
BASE
EMITTER 3
MARKING DIAGRAM
4
1
3
SOT−223
CASE 318E
STYLE 1
A
Y
W
XXXXX
G
2
AYW
XXXXXG
G
1
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BCP53T1G
SBCP53−10T1G
BCP53−10T1G
SBCP53−10T1G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
4000/Tape & Reel
4000/Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
(Surface Mounted)
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
Symbol
R
qJA
T
L
260
10
Max
83.3
Unit
°C/W
BCP53−16T1G
SBCP53−16T1G
°C
s
BCP53−16T3G
NSVBCP53−16T3G SOT−223
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
December, 2015 − Rev. 12
Publication Order Number:
BCP53T1/D

BCP53T1G Related Products

BCP53T1G BCP53-16T1G
Description Rated power: 1.5W Collector current Ic: 1.5A Collector-emitter breakdown voltage Vce: 80V Transistor type: PNP PNP, Vceo=-80V, Ic=1.5A Rated power: 1.5W Collector current Ic: 1.5A Collector-emitter breakdown voltage Vce: 80V Transistor type: PNP PNP
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free
Parts packaging code TO-261AA TO-261AA
package instruction TO-261, 4 PIN TO-261, 4 PIN
Contacts 4 4
Manufacturer packaging code 0.0318 0.0318
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Factory Lead Time 8 weeks 1 week
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 1.5 A 1.5 A
Collector-emitter maximum voltage 80 V 80 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 40 25
JEDEC-95 code TO-261AA TO-261AA
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 4 4
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz
Base Number Matches 1 1

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