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BC847CDXV6T1G

Description
Rated power: 500mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 45V Transistor type: 2 NPN (dual) Dual NPN, 45V, 100mA
CategoryDiscrete semiconductor    The transistor   
File Size125KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC847CDXV6T1G Overview

Rated power: 500mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 45V Transistor type: 2 NPN (dual) Dual NPN, 45V, 100mA

BC847CDXV6T1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Manufacturer packaging code463A-01
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time17 weeks
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BC847CDXV6T1G,
SBC847CDXV6T1G,
BC847CDXV6T5G,
BC848CDXV6T1G
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−563 which is designed for
low power surface mount applications.
Features
(3)
Q
1
http://onsemi.com
(2)
(1)
Q
2
(4)
(5)
BC847CDXV6T1
(6)
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Collector
Emitter Voltage
Collector
Base Voltage
Emitter
Base Voltage
Collector Current
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
6
1
SOT−563
CASE 463A
MARKING DIAGRAMS
1x M
G
G
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1x
M
G
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation, (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation, (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad
Symbol
P
D
Max
357
2.9
350
Unit
mW
mW/°C
°C/W
= Device Code
x = G or M
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
R
qJA
Symbol
P
D
Max
500
4.0
250
−55
to +150
Unit
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
©
Semiconductor Components Industries, LLC, 2011
November, 2011
Rev. 4
1
Publication Order Number:
BC847CDXV6T1/D
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