MOCD207M, MOCD208M,
MOCD211M, MOCD213M,
MOCD217M
8-pin SOIC Dual-Channel
Phototransistor Output
Optocoupler
These devices consist of two gallium arsenide infrared emitting
diodes optically coupled to two monolithic silicon phototransistor
detectors, in a surface mountable, small outline, plastic package. They
are ideally suited for high−density applications, and eliminate the need
for through−the−board mounting.
Features
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•
Closely Matched Current Transfer Ratios
•
Minimum BV
CEO
of 70 V Guaranteed
•
•
•
•
•
– MOCD207M, MOCD208M
Minimum BV
CEO
of 30 V Guaranteed
– MOCD211M, MOCD213M, MOCD217M
Low LED Input Current Required for Easier Logic Interfacing
– MOCD217M
Convenient Plastic SOIC−8 Surface Mountable Package Style, with
0.050″ Lead Spacing
Safety and Regulatory Approvals:
– UL1577, 2,500 VAC
RMS
for 1 Minute
– DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage
These are Pb−Free Devices
SOIC8
M SUFFIX
CASE 751DZ
MARKING DIAGRAM
1
D207
V
X YY S
2
6
Applications
•
Feedback Control Circuits
•
Interfacing and Coupling Systems of Different Potentials and
Impedances
•
General Purpose Switching Circuits
•
Monitor and Detection Circuits
3
4
5
1 − Logo
2 − Device Number
3 − DIN EN/IEC60747−5−5 Option (only appears
on component ordered with this option)
4 − One−Digit Year Code, e.g., “4”
5 − Digit Work Week, Ranging from “01” to “53”
6 − Assembly Package Code
ANODE 1 1
8 COLLECTOR 1
CATHODE 1 2
7 EMITTER 1
ANODE 2 3
6 COLLECTOR 2
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
CATHODE 2 4
5 EMITTER 2
Figure 1. Schematic
©
Semiconductor Components Industries, LLC, 2005
1
December, 2017 − Rev. 5
Publication Order Number:
MOCD217M/D
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M
Safety and Insulation Ratings
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated
Mains Voltage
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
< 150 V
RMS
< 300 V
RMS
Characteristics
I−IV
I−III
55/100/21
2
175
Symbol
V
PR
Parameter
Input−to−Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC
Input−to−Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC
Value
904
1060
565
4000
≥4
≥4
≥0.4
150
200
300
>10
9
Unit
V
peak
V
peak
V
peak
V
peak
mm
mm
mm
°C
mA
mW
W
V
IORM
V
IOTM
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
External Clearance
DTI
T
S
I
S,INPUT
P
S,OUTPUT
R
IO
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
Input Current (Note 1)
Output Current (Note 1)
Insulation Resistance at T
S
, V
IO
= 500 V (Note 1)
1. Safety limit values – maximum values allowed in the event of a failure.
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2
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Symbol
TOTAL DEVICE
T
STG
T
A
T
J
T
SOL
P
D
Storage Temperature
Ambient Operating Temperature
Junction Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25°C
Derate Above 25°C
EMITTER
I
F
I
F
(pk)
V
R
P
D
Continuous Forward Current
Forward Current – Peak (PW = 100
ms,
120 pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate Above 25°C
DETECTOR
I
C
V
CEO
Continuous Collector Current
Collector−Emitter Voltage
− MOCD207M, MOCD208M
− MOCD211M, MOCD213M, MOCD217M
V
ECO
P
D
Emitter−Collector Voltage
Detector Power Dissipation @ T
A
= 25°C
Derate Above 25°C
150
70
30
7
150
1.76
mA
V
V
V
mW
mW/°C
60
1.0
6.0
90
0.8
mA
A
V
mW
mW/°C
−40 to +125
−40 to +100
−40 to +125
260 for 10 seconds
240
2.94
°C
°C
°C
°C
mW
mW/°C
Rating
Value
Unit
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
EMITTER
V
F
Input Forward Voltage
MOCD217M
MOCD213M
MOCD207M,
MOCD208M,
MOCD211M
I
R
C
IN
DETECTOR
I
CEO
Collector−Emitter Dark Current
All
V
CE
= 10 V, T
A
= 25°C
V
CE
= 10 V, T
A
= 100°C
BV
CEO
Collector−Emitter Breakdown
Voltage
MOCD211M,
MOCD213M,
MOCD217M
MOCD207M,
MOCD208M
BV
ECO
C
CE
COUPLED
CTR
Collector−Output Current
MOCD207M
MOCD208M
MOCD211M
MOCD213M
MOCD217M
V
CE(SAT)
Collector−Emitter Saturation
Voltage
MOCD207M,
MOCD208M,
MOCD211M,
MOCD213M
MOCD217M
t
on
t
off
t
r
t
f
ISOLATION
V
ISO
C
ISO
R
ISO
Input−Output Isolation Voltage
Isolation Capacitance
Isolation Resistance
All
All
All
t = 1 Minute
V
I−O
= 0 V, f = 1 MHz
V
I−O
=
±500
VDC, T
A
= 25°C
2500
−
10
11
−
0.2
−
−
−
−
VAC
RMS
pF
W
Turn−On Time
Turn−Off Time
Rise Time
Fall Time
All
All
All
All
I
F
= 10 mA, V
CE
= 5 V
I
F
= 10 mA, V
CE
= 5 V
I
F
= 10 mA, V
CE
= 5 V
I
F
= 10 mA, V
CE
= 5 V
I
F
= 1 mA, V
CE
= 5 V
I
C
= 2 mA, I
F
= 10 mA
100
40
20
100
100
−
−
−
−
−
−
−
200
125
−
−
−
0.4
%
%
%
%
%
V
Emitter−Collector Breakdown
Voltage
Collector−Emitter Capacitance
All
All
I
C
= 100
mA
−
−
30
1.0
1.0
100
50
−
−
nA
mA
V
Reverse Leakage Current
Input Capacitance
All
All
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
−
−
−
1.05
1.15
1.25
1.3
1.5
1.5
V
V
V
Parameter
Device
Test Conditions
Min
Typ
Max
Unit
V
R
= 6 V
−
−
0.001
18
100
−
mA
pF
I
C
= 100
mA
I
E
= 100
mA
f = 1.0 MHz, V
CE
= 0
70
7
−
100
10
7
−
−
−
V
V
pF
I
C
= 100
mA,
I
F
= 1 mA
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100
W
(Figure 7)
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100
W
(Figure 7)
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100
W
(Figure 7)
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100
W
(Figure 7)
−
−
−
−
−
−
7.5
5.7
3.2
4.7
0.4
−
−
−
−
V
ms
ms
ms
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M
TYPICAL CHARACTERISTICS
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.8
10
1.7
V
F
– FORWARD VOLTAGE (V)
1.6
1.5
1
V
CE
= 5 V
NORMALIZED TO I
F
= 10 mA
1.4
T
A
= –55_C
1.3
T
A
= 25_C
1.2
0.1
1.1
T
A
= 100_C
1.0
1
10
100
I
F
– LED FORWARD CURRENT (mA)
0.01
Figure 2. LED Forward Voltage vs. Forward
Current
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
10
0.1
1
10
100
I
F
– LED INPUT CURRENT (mA)
Figure 3. Output Current vs. Input Current
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.6
1.4
1.2
1.0
1
0.8
0.6
0.4
0.2
I
F
= 10 mA
NORMALIZED TO V
CE
= 5 V
0.0
0
1
2
3
4
5
6
7
8
9
10
NORMALIZED TO T
A
= 25_C
0.1
−80
−60
−40
−20
0
20
40
60
80
100
120
T
A
– AMBIENT TEMPERATURE (_C)
V
CE
– COLLECTOR−EMITTER VOLTAGE (V)
Figure 4. Output Current vs. Ambient
Temperature
10000
Figure 5. Output Current vs. Collector−Emitter
Voltage
I
CEO
– COLLECTOR −EMITTER DARK CURRENT (nA)
1000
V
CE
= 10 V
100
10
1
0.1
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE (
_C)
Figure 6. Dark Current vs. Ambient
Temperature
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