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BC848BLT1G

Description
Rated power: 300mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 30V Transistor type: NPN NPN, Vceo=30V, Ic=100mA, hfe=200~450
CategoryDiscrete semiconductor    The transistor   
File Size108KB,13 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC848BLT1G Overview

Rated power: 300mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 30V Transistor type: NPN NPN, Vceo=30V, Ic=100mA, hfe=200~450

BC848BLT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.225 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: > 4000 V
ESD Rating
− Machine Model: > 400 V
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC846
BC847, BC850
BC848, BC849
Collector−Base Voltage
BC846
BC847, BC850
BC848, BC849
Emitter−Base Voltage
BC846
BC847, BC850
BC848, BC849
Collector Current − Continuous
I
C
V
EBO
6.0
6.0
5.0
100
mAdc
V
CBO
80
50
30
Vdc
Symbol
V
CEO
65
45
30
Vdc
Value
Unit
Vdc
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
XX M
G
G
1
XX
M
G
= Device Code
= Date Code*
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
Unit
mW
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1.8
R
qJA
P
D
556
300
mW/°C
°C/W
mW
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
2.4
R
qJA
T
J
, T
stg
417
−55 to
+150
mW/°C
°C/W
°C
1. FR− 5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 1994
1
January, 2017 − Rev. 17
Publication Order Number:
BC846ALT1/D

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Description Rated power: 300mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 30V Transistor type: NPN NPN, Vceo=30V, Ic=100mA, hfe=200~450 Rated power: 300mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 45V Transistor type: NPN NPN 45V 100mA Rated power: 300mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 65V Transistor type: NPN NPN, Vceo=65V, Ic=100mA, hfe=200~450 Rated power: 300mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 30V Transistor type: NPN NPN, 30V, 100mA Rated power: 225mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 45V Transistor type: NPN NPN, 45V, 100mA Rated power: 225mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 45V Transistor type: NPN NPN Rated power: 300mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 45V Transistor type: NPN NPN, 45V, 6A Rated power: 300mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 65V Transistor type: NPN NPN, Vceo=65V, Ic=100mA, hfe=110~220 Rated power: 300mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 65V Transistor type: NPN
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SOT-23, 3 PIN SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3 3 3 3 3 3
Manufacturer packaging code 318-08 318-08 318-08 318-08 318-08 318-08 318-08 318-08 318-08
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Factory Lead Time 1 week 1 week 4 weeks 1 week 1 week 1 week 1 week 1 week 4 weeks
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V 45 V 65 V 30 V 45 V 45 V 45 V 65 V 65 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 420 200 420 110 200 200 110 200
JEDEC-95 code TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3 e3 e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1 1 1 1 1
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 NOT SPECIFIED 260 NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.225 W 0.3 W 0.225 W 0.3 W 0.3 W 0.3 W 0.3 W 0.225 W 0.3 W
surface mount YES YES YES YES YES YES YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40 40 40 40 NOT SPECIFIED 40 NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Parts packaging code SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 - SOT-23 -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified -
Base Number Matches 1 1 1 1 1 1 1 1 -
Minimum operating temperature - -55 °C -55 °C - -55 °C - - -55 °C -55 °C
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