NGTB75N65FL2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.
Features
•
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
T
Jmax
= 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5
ms
Short−Circuit Capability
These are Pb−Free Devices
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75 A, 650 V
V
CEsat
= 1.70 V
E
OFF
= 1.0 mJ
C
Typical Applications
•
Solar Inverters
•
Uninterruptible Power Supplies (UPS)
•
Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ T
C
= 25°C
@ T
C
= 100°C
Diode Forward Current
@ T
C
= 25°C
@ T
C
= 100°C
Diode Pulsed Current
T
PULSE
Limited by T
J
Max
Pulsed collector current, T
pulse
limited by T
Jmax
Short−circuit withstand time
V
GE
= 15 V, V
CE
= 400 V,
T
J
≤
+150°C
Gate−emitter voltage
Transient gate−emitter voltage
(T
PULSE
= 5
ms,
D < 0.10)
Power Dissipation
@ T
C
= 25°C
@ T
C
= 100°C
Operating junction temperature
range
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
P
D
595
265
T
J
T
stg
T
SLD
−55 to +175
−55 to +175
260
°C
°C
°C
A
Y
WW
G
Symbol
V
CES
I
C
100
75
I
F
100
75
I
FM
I
CM
t
SC
200
200
5
A
A
ms
A
G
C
E
Value
650
Unit
V
A
G
E
TO−247
CASE 340AL
MARKING DIAGRAM
V
GE
$20
$30
V
V
75N65FL2
AYWWG
W
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
NGTB75N65FL2WG
Package
TO−247
(Pb−Free)
Shipping
30 Units / Rail
©
Semiconductor Components Industries, LLC, 2015
1
September, 2016 − Rev. 5
Publication Order Number:
NGTB75N65FL2W/D
NGTB75N65FL2WG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
R
qJC
R
qJC
R
qJA
Value
0.28
0.62
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
Gate to collector charge
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V
GE
= 0 V, I
F
= 75 A
V
GE
= 0 V, I
F
= 75 A, T
J
= 175°C
T
J
= 25°C
I
F
= 75 A, V
R
= 400 V
di
F
/dt = 200 A/ms
T
J
= 175°C
I
F
= 75 A, V
R
= 400 V
di
F
/dt = 200 A/ms
V
F
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
1.50
−
−
−
−
−
−
−
2.20
2.40
80
0.40
8
143
1.45
16
2.90
−
−
−
−
−
−
−
V
ns
mC
A
ns
mC
A
T
J
= 150°C
V
CC
= 400 V, I
C
= 75 A
R
g
= 10
W
V
GE
= 0 V/ 15 V
T
J
= 25°C
V
CC
= 400 V, I
C
= 75 A
R
g
= 10
W
V
GE
= 0 V/ 15 V
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
−
−
−
−
−
−
−
−
−
−
−
−
−
−
110
48
270
70
2.2
1.1
3.3
100
50
280
100
2.8
1.6
4.4
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mJ
ns
mJ
ns
V
CE
= 480 V, I
C
= 50 A, V
GE
= 15 V
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
−
−
−
−
−
−
7500
300
190
310
60
150
−
−
−
−
−
−
nC
pF
V
GE
= 0 V, I
C
= 500
mA
V
GE
= 15 V, I
C
= 75 A
V
GE
= 15 V, I
C
= 75 A, T
J
= 175°C
V
GE
= V
CE
, I
C
= 350
mA
V
GE
= 0 V, V
CE
= 650 V
V
GE
= 0 V, V
CE
= 650 V, T
J =
175°C
V
GE
= 20 V , V
CE
= 0 V
V
(BR)CES
V
CEsat
V
GE(th)
I
CES
I
GES
650
1.50
−
4.5
−
−
−
−
1.75
2.30
5.5
−
−
−
−
2.00
−
6.5
0.1
4.0
200
V
V
V
mA
nA
Test Conditions
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB75N65FL2WG
TYPICAL CHARACTERISTICS
200
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
180
160
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
9V
8V
7V
7
10 V
11 V
V
GE
= 20 V
to 13 V
T
J
= 25°C
200
180
160
140
120
100
80
60
40
20
0
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
T
J
= 150°C
11 V
10 V
9V
8V
7V
V
GE
= 20 V
to 15 V
13 V
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
200
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
180
160
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
7V
9V
8V
7
8
10 V
11 V
V
GE
= 20 V
to 13 V
T
J
= −55°C
160
140
120
100
80
60
40
20
0
0
1
Figure 2. Output Characteristics
T
J
= 150°C
T
J
= 25°C
2
3
4
5
6
7
8
9
10 11 12 13
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
2.50
I
C
= 75 A
C, CAPACITANCE (pF)
2.00
I
C
= 50 A
I
C
= 25 A
10,000
100,000
Figure 4. Typical Transfer Characteristics
T
J
= 25°C
C
ies
1.50
1000
C
oes
100
C
res
1.00
0.50
0
−75 −50 −25
10
1
0
25
50
75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
90 100
T
J
, JUNCTION TEMPERATURE (°C)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. V
CE(sat)
vs. T
J
Figure 6. Typical Capacitance
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NGTB75N65FL2WG
TYPICAL CHARACTERISTICS
70
V
GE
, GATE−EMITTER VOLTAGE (V)
I
F
, FORWARD CURRENT (A)
60
50
40
30
20
T
J
= 150°C
10
0
0
0.5
1.0
T
J
= 25°C
1.5
2.0
2.5
3.0
3.5
4.0
16
14
12
10
8
6
4
2
0
0
50
100
150
200
Q
G
, GATE CHARGE (nC)
V
CE
= 400 V
V
GE
= 15 V
I
C
= 75 A
250
300
350
V
CE
= 400 V
V
F
, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
3.0
2.5
SWITCHING LOSS (mJ)
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
V
CE
= 400 V
V
GE
= 15 V
I
C
= 75 A
Rg = 10
W
120
140
160
E
off
E
on
SWITCHING TIME (ns)
1000
t
d(off)
t
d(on)
100
t
f
t
r
V
CE
= 400 V
V
GE
= 15 V
I
C
= 75 A
Rg = 10
W
10
0
20
40
60
80
100
120
140
160
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
6
5
SWITCHING LOSS (mJ)
4
3
E
off
2
1
0
15
25
35
45
55
65
75
85
95
105
I
C
, COLLECTOR CURRENT (A)
V
CE
= 400 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10
W
1000
E
on
SWITCHING TIME (ns)
t
d(off)
t
f
100
t
d(on)
t
r
V
CE
= 400 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10
W
35
45
55
65
75
85
95
105
10
15
25
I
C
, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. I
C
Figure 12. Switching Time vs. I
C
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NGTB75N65FL2WG
TYPICAL CHARACTERISTICS
10,000
V
CE
= 400 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 75 A
V
CE
= 400 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 75 A
1000
t
d(on)
t
r
100
t
f
14
12
SWITCHING LOSS (mJ)
10
8
6
E
off
4
2
0
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
E
on
SWITCHING TIME (ns)
t
d(off)
10
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
6
5
SWITCHING LOSS (mJ)
4
3
2
1
0
150 200 250 300
V
GE
= 15 V
T
J
= 150°C
I
C
= 75 A
Rg = 10
W
350 400
450 500 550 600 650
1000
SWITCHING TIME (ns)
E
on
t
d(off)
t
d(on)
100
t
f
t
r
E
off
V
GE
= 15 V
T
J
= 150°C
I
C
= 75 A
Rg = 10
W
10
150 200 250 300 350 400 450 500 550 600 650
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. V
CE
1000
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
1000
Figure 16. Switching Time vs. V
CE
100
dc operation
10
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
1
10
100
50
ms
100
ms
1 ms
100
10
1
0.1
V
GE
= 15 V, T
C
= 150°C
1000
1
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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