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DTC144EM3T5G

Description
NPN,Vceo=50V,Ic=100mA
CategoryDiscrete semiconductor    The transistor   
File Size150KB,12 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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DTC144EM3T5G Overview

NPN,Vceo=50V,Ic=100mA

DTC144EM3T5G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Manufacturer packaging code631AA
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time2 weeks
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.6 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
MUN2213, MMUN2213L,
MUN5213, DTC144EE,
DTC144EM3, NSBC144EF3
Digital Transistors (BRT)
R1 = 47 kW, R2 = 47 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
PIN 1
BASE
(INPUT)
www.onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
SC−59
CASE 318D
STYLE 1
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
XX MG
G
1
XXX MG
G
1
XX MG
G
1
XX M
1
XX M
1
XM 1
SOT−23
CASE 318
STYLE 6
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
(Rotated 0° Clockwise
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XXX
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
March, 2019
Rev. 5
1
Publication Order Number:
DTC144E/D

DTC144EM3T5G Related Products

DTC144EM3T5G MUN5213T1G
Description NPN,Vceo=50V,Ic=100mA
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free
Maker ON Semiconductor ON Semiconductor
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Manufacturer packaging code 631AA 419-04
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Factory Lead Time 2 weeks 4 weeks
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 80 80
JESD-30 code R-PDSO-F3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.6 W 0.31 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form FLAT GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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