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MJE702G

CategoryDiscrete semiconductor    The transistor   
File Size126KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-225
package instructionROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
Contacts3
Manufacturer packaging code77-09
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time2 weeks
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)4 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-225
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)1 MHz
Base Number Matches1
MJE700G, MJE702G,
MJE703G (PNP), MJE800G,
MJE802G, MJE803G (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
http://onsemi.com
High DC Current Gain − h
FE
= 2000 (Typ) @ I
C
= 2.0 Adc
Monolithic Construction with Built−in Base−Emitter Resistors to
Limit Leakage − Multiplication
Choice of Packages − MJE700 and MJE800 Series
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G,
MJE803G
Collector−Base Voltage
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G,
MJE803G
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
60
80
V
CB
60
80
V
EB
I
C
I
B
P
D
40
0.32
T
J
, T
stg
–55 to +150
W
mW/_C
_C
5.0
4.0
0.1
Vdc
Adc
Adc
Vdc
Value
Unit
Vdc
4.0 AMPERE
DARLINGTON POWER
TRANSISTORS
COMPLEMENTARY SILICON
40 WATT
NPN
COLLECTOR 2, 4
BASE
3
PNP
COLLECTOR 2, 4
BASE
3
EMITTER 1
MJE800
MJE802
MJE803
EMITTER 1
MJE700
MJE702
MJE703
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
YWW
JEx0yG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
3.12
83.3
Unit
_C/W
_C/W
Y
= Year
WW
= Work Week
JEx0y = Device Code
x = 7 or 8
y = 0, 2, or 3
G
= Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1
December, 2013 − Rev. 12
Publication Order Number:
MJE700/D

MJE702G Related Products

MJE702G MJE800G MJE802G
Description Rated power: 40W Collector current Ic: 4A Collector-emitter breakdown voltage Vce: 60V Transistor type: NPN - Darlington Rated power: 40W Collector current Ic: 4A Collector-emitter breakdown voltage Vce: 80V Transistor type: NPN NPN, Vceo=80V, Ic=4A
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free
Maker ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code TO-225 TO-225 TO-225
package instruction ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Manufacturer packaging code 77-09 77-09 77-09
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Factory Lead Time 2 weeks 1 week 8 weeks
Other features BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR
Maximum collector current (IC) 4 A 4 A 4 A
Collector-emitter maximum voltage 80 V 60 V 80 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 750 750 750
JEDEC-95 code TO-225 TO-225 TO-225
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type PNP NPN NPN
Maximum power dissipation(Abs) 40 W 40 W 40 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin (Sn) Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 40
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 1 MHz 1 MHz 1 MHz
Base Number Matches 1 1 1
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