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FQPF27P06
P-Channel MOSFET
March 2013
-60
V,
-17
A,
26
mΩ
Description
P-Channel
QFET
®
MOSFET
Features
•
-17 A, -60 V, R
DS(on)
=26 mΩ(Max.) @V
GS
=-10 V, I
D
=-8.5 A
• Low
Gate Charge
(Typ.
33
nC)
• Low Crss (Typ.
120
pF)
• 100%
Avalanche Tested
•
175°C Maximum Junction Temperature Rating
FQPF27P06
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor
®
’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
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