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MJD5731T4G

Description
Rated power: 1.56W Collector current Ic: 1A Collector-emitter breakdown voltage Vce: 350V Transistor type: PNP PNP, Vceo=350V, Ic=1A
CategoryDiscrete semiconductor    The transistor   
File Size120KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MJD5731T4G Overview

Rated power: 1.56W Collector current Ic: 1A Collector-emitter breakdown voltage Vce: 350V Transistor type: PNP PNP, Vceo=350V, Ic=1A

MJD5731T4G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3
Contacts3
Manufacturer packaging code369C
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time10 weeks
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage350 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
Base Number Matches1
MJD5731
High Voltage PNP Silicon
Power Transistors
Designed for line operated audio output amplifier, SWITCHMODE
power supply drivers and other switching applications.
Features
http://onsemi.com
PNP Complements to the MJD47 thru MJD50 Series
Epoxy Meets UL 94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Unclamped Inductive Load Energy
(See Figure 10)
Operating and Storage Junction
Temperature Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CEO
V
EB
I
C
I
CM
P
D
15
0.12
P
D
1.56
0.0125
E
T
J
, T
stg
HBM
MM
20
−55 to +150
3B
C
W
W/°C
mJ
°C
V
V
W
W/°C
Max
350
5
1.0
3.0
Unit
Vdc
Vdc
Adc
Adc
SILICON
POWER TRANSISTORS
1.0 AMPERE
350 VOLTS, 15 WATTS
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
1 2
3
DPAK
CASE 369C
STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
MARKING DIAGRAM
AYWW
J
5731G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
(Note 2)
Lead Temperature for Soldering
Symbol
R
qJC
R
qJA
T
L
Max
8.33
80
260
Unit
°C/W
°C/W
°C
A
Y
WW
J5731
G
2. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
MJD5731T4G
Package
DPAK
(Pb−Free)
Shipping
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
1
August, 2013 − Rev. 5
Publication Order Number:
MJD5731/D
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