BSS84L, BVSS84L
Power MOSFET
Single P-Channel SOT-23
-50 V, 10
W
•
SOT−23 Surface Mount Package Saves Board Space
•
BV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
Continuous @ T
A
= 25°C
Pulsed Drain Current (t
p
≤
10
ms)
Total Power Dissipation @ T
A
= 25°C
Operating and Storage Temperature
Range
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
qJA
T
L
Value
50
±
20
130
520
225
− 55 to
150
556
260
mW
°C
°C/W
°C
1
2
3
www.onsemi.com
V
(BR)DSS
−50 V
R
DS(ON)
MAX
10
W
@ 10 V
Unit
Vdc
Vdc
mA
1
P−Channel
3
2
SOT−23
CASE 318
STYLE 21
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM & PIN ASSIGNMENT
3
Drain
PD MG
G
1
Gate
PD
M
G
2
Source
= Specific Device Code
= Date Code
= Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BSS84LT1G
BVSS84LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1997
1
October, 2016 − Rev. 9
Publication Order Number:
BSS84LT1/D
BSS84L, BVSS84L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= −250
mAdc)
Zero Gate Voltage Drain Current
(V
DS
= −25 Vdc, V
GS
= 0 Vdc)
(V
DS
= −50 Vdc, V
GS
= 0 Vdc)
(V
DS
= −50 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
Gate−Body Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 1)
Gate−Source Threaded Voltage (V
DS
= V
GS
, I
D
= −250
mA)
Static Drain−to−Source On−Resistance (V
GS
= −5.0 Vdc, I
D
= −100 mAdc)
Transfer Admittance (V
DS
= −25 Vdc, I
D
= −100 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
V
DD
= −40 Vdc, I
D
= −0.5 A,
V
GS
= −10 V
V
DD
= −15 Vdc, I
D
= −2.5 Adc,
R
L
= 50
W
t
d(on)
t
r
t
d(off)
t
f
Q
T
−
−
−
−
−
3.6
9.7
12
1.7
2.2
−
−
−
−
−
nC
ns
V
DS
= 5.0 Vdc
V
DS
= 5.0 Vdc
V
DG
= 5.0 Vdc
C
iss
C
oss
C
rss
−
−
−
36
17
6.5
−
−
−
pF
V
GS(th)
R
DS(on)
|y
fs
|
−0.9
−
50
−
4.7
−
−2.0
10
−
Vdc
W
mS
V
(BR)DSS
I
DSS
−
−
−
I
GSS
−
−
−
−
−
−0.1
−15
−60
±10
nAdc
−50
−
−
Vdc
mAdc
Symbol
Min
Typ
Max
Unit
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2)
V
GS
= 0 V, I
S
= −130 mA
I
S
I
SM
V
SD
−
−
−
−
−
−
−0.130
−0.520
−2.2
V
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
V
DS
= 10 V
−I
D
, DRAIN CURRENT (AMPS)
0.5
- 55°C
0.4
0.3
0.2
0.1
0
150°C
25°C
−I
D
, DRAIN CURRENT (AMPS)
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
4
5
6
7
8
-2.5 V
-2.25 V
9
10
-2.75 V
-3.0 V
T
J
= 25°C
V
GS
= -3.5 V
-3.25 V
1
1.5
2
2.5
3
3.5
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
4
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
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2
Figure 2. On−Region Characteristics
BSS84L, BVSS84L
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
9
V
GS
= -4.5 V
8
7
6
5
4
3
2
0
0.1
0.2
0.3
0.4
0.5
0.6
-I
D
, DRAIN CURRENT (AMPS)
-55°C
25°C
150°C
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
0
0.1
0.2
0.3
0.4
0.5
0.6
-I
D
, DRAIN CURRENT (AMPS)
-55°C
25°C
V
GS
= -10 V
150°C
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance versus Drain Current
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
- 55
V
GS
= -4.5 V
I
D
= -0.13 A
V
GS
= -10 V
I
D
= -0.52 A
-8
-7
-6
-5
-4
-3
-2
-1
0
0
500
1000
1500
2000
I
D
= -0.5 A
V
DS
= -40 V
T
J
= 25°C
-5
45
95
145
T
J
, JUNCTION TEMPERATURE (°C)
Q
T
, TOTAL GATE CHARGE (pC)
Figure 5. On−Resistance Variation with Temperature
Figure 6. Gate Charge
1
I
D
, DRAIN CURRENT (AMPS)
0.1
T
J
= 150°C
25°C
-55°C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
-V
SD
, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
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3
BSS84L, BVSS84L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
3X
b
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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4
BSS84LT1/D
Motor Drive Control（Motor Control）
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