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BAS40-06HMFHT116

Description
DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 120mA Forward voltage drop (Vf): 1V @ 40mA
CategoryDiscrete semiconductor    diode   
File Size957KB,7 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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BAS40-06HMFHT116 Overview

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 120mA Forward voltage drop (Vf): 1V @ 40mA

BAS40-06HMFHT116 Parametric

Parameter NameAttribute value
MakerROHM Semiconductor
package instructionR-PDSO-G3
Reach Compliance Codeunknown
Factory Lead Time12 weeks
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current0.6 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.12 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage40 V
Maximum reverse current10 µA
Reverse test voltage40 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Schottky Barrier Diode
BAS40-06HMFH
Application
Small current rectification
2.4
Datasheet
Dimensions
(Unit : mm)
AEC-Q101 Qualified
Land
Size Figure
(Unit : mm)
1.9
Features
1) Small mold type
(SOT-23)
2) High reliability
3) Low V
F
4C
ROHM : SSD3
JEDEC : SOT-23
JEITA : -
1.0MIN
SOT-23
0.8MIN
Structure
(3)
(1) Cathode
(2) Cathode
(1)
(2)
(3) Anode
Construction
Silicon epitaxial planar type
Taping
Dimensions
(Unit : mm)
T116
Absolute
Maximum Ratings
(T
a
= 25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward rectified current
Repetitive peak forward current
Non-repetitive forward surge current
Symbol
V
RM
V
R
I
F
I
FRM
I
FSM
T
j
T
stg
Conditions
Duty≦0.5
Direct reverse voltage
Direct current, per diode
t
≦1s,
Duty≦0.5, per diode
Square wave, tp<10ms,
non-repetitive at T
a
=25ºC, per diode
Limits
40
40
120
120
0.6
150
55
to
150
Unit
V
V
mA
mA
A
°C
°C
Operating junction temperature
Storage temperature
-
-
Electrical
Characteristics
(T
j
= 25°C)
Parameter
Symbol
V
F1
Forward voltage
V
F2
V
F3
Reverse current
I
R1
I
R2
Conditions
I
F
=1mA
I
F
=10mA
I
F
=40mA
V
R
=30V
V
R
=40V
Min.
-
-
-
-
-
Typ. Max. Unit
-
-
-
-
-
0.38
0.50
1
1
10
V
V
V
A
A
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/3
2016.11 - Rev.B
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