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BAV99HMT116

Description
Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 215mA Forward voltage drop (Vf): 1.25V @ 150mA
CategoryDiscrete semiconductor    Switching diode   
File Size1MB,9 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

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BAV99HMT116 Overview

Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 215mA Forward voltage drop (Vf): 1.25V @ 150mA

BAV99HMT116 Parametric

Parameter NameAttribute value
Reverse recovery time (trr)4ns
DC reverse withstand voltage (Vr)100V
Average rectified current (Io)215mA
Forward voltage drop (Vf)1.25V @ 150mA
BAV99HM
Switching Diode (High speed switching)
Data sheet
     
 
 
 
 
 
 
 
 
     
                                                 
Outline
V
RM
I
FM
I
F
I
FSM
100
500
215
4000
V
mA
mA
mA
Features
Inner Circuit
High reliability
Small mold type
Application
High speed switching
Structure
Epitaxial planar
Absolute Maximum Ratings
Packaging Specifications
Packing
Embossed T
ape
Reel Size(mm)
180
T
aping Width(mm)
8
Basic Ordering Unit(pcs)
3000
T
aping Code
T116
Marking
D7Y
Parameter
Repetitive peak reverse voltage
Reverse voltage
Power dissipation
Repetitive peak reverse forward current
Peak forward surge current
Forward current
Junction temperature
Storage temperature
Caution
static electricity
(T
a
= 25ºC)
Symbol
V
RM
V
R
P
D
I
FM
I
FSM
I
F
T
j
T
stg
 
 
    
 
Conditions
-
-
T
25
a
Per diode
t=1μs
Per diode
Per device
-
-
Limits
100
80
250
500
4000
215
125
150
-65
½
150
Unit
V
V
mW
mA
mA
mA
mA
                                                                                        
www.rohm.com
1/5
© 2017 ROHM Co., Ltd. All rights reserved.
 
2018/04/11_Rev.003

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