BAS70
Low capacitance, low series inductance and resistance Schottky diodes
Features
■
■
■
■
■
■
BAS70ZFILM
(Single)
SOD-123
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
Surface mount device
Low capacitance diode
Low resistance and inductance
BAS70JFILM
(Single)
SOD-323
BAS70KFILM
(Single)
SOD-523
Description
The BAS70 series uses 70 V Schottky barrier
diodes packaged in SOD-123, SOD-323, SOD-
523, SOT-23, SOT-323, SOT-323-6L or SOT-666.
These diodes are specially suited for signal
detection and temperature compensation in RF
applications.
BAS70FILM
(Single)
BAS70-04FILM
(Series)
BAS70-05FILM
(Common cathode)
BAS70-06FILM
(Common anode)
SOT-23
BAS70WFILM
(Single)
BAS70-04WFILM
(Series)
BAS70-05WFILM
(Common cathode)
BAS70-06WFILM
(Common anode)
SOT-323
BAS70-08SFILM
(3 parallel diodes)
Table 1.
Device summary
Symbol
I
F
V
RRM
C (max)
T
j
(max)
Value
70 mA
70 V
2 pF
150 °C
SOT-323-6L
BAS70-07P6FILM
(2 parallel diodes)
SOT-666
BAS70-09P6FILM
(2 opposite diodes)
Configurations in top view
October 2009
Doc ID 12563 Rev 2
1/14
www.st.com
14
Characteristics
BAS70
1
Characteristics
Table 2.
Symbol
V
RRM
I
F
I
FSM
T
stg
T
j
T
L
Absolute ratings (limiting values at T
j
= 25 °C, unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Continuous forward current
Surge non repetitive forward current t
p
= 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
Maximum soldering temperature
Value
70
70
1
- 65 to +150
150
260
Unit
V
mA
A
°C
°C
°C
Table 3.
Symbol
Thermal parameters
Parameter
SOD-123, SOT-23
Value
500
550
600
°C/W
Unit
R
th(j-a)
Junction to ambient
(1)
SOT-323, SOD-323
SOD-523, SOT-666
1. Epoxy printed circuit board with recommended pad layout
Table 4.
Symbol
I
R(1)
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
V
R
= 50 V
V
R
= 70 V
I
F
= 1 mA
Min.
Typ.
Max.
100
10
410
750
1000
mV
Unit
nA
µA
V
F(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 10 mA
I
F
= 15 mA
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
Table 5.
Symbol
C
R
F
L
S
Dynamic characteristics
Parameter
Diode capacitance
Differential forward
resistance
Series inductance
Test conditions
V
R
= 0 V, F = 1 MHz
I
F
= 10 mA, F = 100 MHz
30
1.5
Min.
Typ.
Max.
2
Unit
pF
Ω
nH
2/14
Doc ID 12563 Rev 2
BAS70
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
I
F(AV)
(A)
0.08
d=0.05
d=0.1
d=0.2
d=0.5
d=1
Average forward current versus
ambient temperature (δ = 1)
P(W)
0.14
0.12
0.10
0.07
0.06
0.05
0.08
0.04
0.06
0.04
0.02
I
F(AV)
(A)
0.00
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.03
T
T
0.02
0.01
0.00
d
=tp/T
0.07
0.08
tp
0.09
0.10
d
=tp/T
0
25
tp
T
amb
(°C)
50
75
100
125
150
Figure 3.
Reverse leakage current versus
reverse applied voltage
(typical values)
Figure 4.
Reverse leakage current versus
junction temperature
(typical values)
I
R
(µA)
1.E+02
Tj=150 °C
1.E+02
I
R
(µA)
V
R
=50 V
1.E+01
1.E+01
1.E+00
Tj=85 °C
1.E+00
1.E-01
1.E-01
1.E-02
Tj=25 °C
1.E-03
0
10
20
30
40
V
R
(V)
50
60
70
T
j
(°C)
1.E-02
0
25
50
75
100
125
150
Figure 5.
Junction capacitance versus
reverse applied voltage
(typical values)
F=1 MHz
V
OSC
=30 mV
RMS
Tj=25 °C
Figure 6.
Forward voltage drop versus
forward current (typical values)
C(pF)
10.0
I
FM
(mA)
1.E+02
Tj=150 °C
1.E+01
1.0
Tj=-40 °C
1.E+00
Tj=85°C
0.1
0.1
1.0
V
R
(V)
10.0
100.0
V
FM
(V)
1.E-01
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Doc ID 12563 Rev 2
3/14
Characteristics
BAS70
Figure 7.
Forward voltage drop versus
forward current (typical values)
Figure 8.
Differential forward resistance
versus forward current
(typical values)
F=100 MHz
Tj=25 °C
1.E+02
I
FM
(mA)
1000
Tj=125 °C
R
F
(
Ω
)
Tj=25 °C
1.E+01
100
1.E+00
V
FM
(V)
1.E-01
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
0.1
I
F
(mA)
1.0
10.0
Figure 9.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 10. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Z
th(j-a)
/R
th(j-a)
1.00
Single pulse
SOT-23
1000
Z
th(j-a)
(°C/W)
printed circuit board, epoxy FR4 e
CU
= 35 µm SOT-323-6L
Single pulse
SOT-323-6L
100
0.10
Aluminesubstrate
10 x 8 x 0.5 mm
10
1.E-02
t
P
(s)
1.E-01
1.E+00
1.E+01
1.E+02
alluminium oxide substrate 10 x 8 x 0.5 mm SOT-23
0.01
1.E-02
1.E-01
1.E+00
1.E+01
t
P
(s)
1.E+02
Figure 11. Relative variation of thermal
impedance junction to ambient
versus pulse duration
1.00
Figure 12. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Z
th(j-a)
/R
th(j-a)
1.00
Single pulse
SOT-666
Z
th(j-a)
/R
th(j-a)
Single pulse
SOD-323
0.10
EpoxyFR4
S
CU
=2.25 mm²
e
CU
=35 µm
0.10
Epoxy FR4
e
CU
=35 µm
printed circuit board, epoxy FR4 e
CU
= 35 µm SOD-323
0.01
1.E-02
1.E-01
1.E+00
1.E+01
t
P
(s)
1.E+02
printed circuit board, epoxy FR4 e
CU
= 35 µm SOT-666
0.01
1.E-03
1.E-02
1.E-01
1.E+00
t
P
(s)
1.E+01
4/14
Doc ID 12563 Rev 2
BAS70
Ordering information scheme
Figure 13. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Z
th(j-a)
/R
th(j-a)
1.00
Single pulse
SOD-523
Figure 14. Thermal impedance junction to
ambient versus copper surface
under each lead
R
th(j-a)
(°C/W)
600
printed circuit board, epoxy FR4 e
CU
= 35 µm SOD-323
550
EpoxyFR4
e
CU
=35 µm
0.10
500
450
0.01
400
350
printed circuit board, epoxy FR4 e
CU
= 35 µm SOD-523
0.00
1.E-03
1.E-02
1.E-01
1.E+00
t
P
(s)
1.E+01
300
0
5
10
15
20
25
30
35
40
S
CU
(mm²)
45
50
2
Ordering information scheme
Figure 15. Ordering information scheme
BAS70
Signal Schottky diodes
V
RRM
= 70 V
Configuration
No letter = Single diode
04 = Series diodes
05 = Common cathode
06 = Common anode
07 = 2 Parallel diodes
08 = 3 Parallel diodes
09 = 2 Opposite diodes
Package
Blank = SOT-23
J = SOD-323
W = SOT-323
K = SOD-523
P6 = SOT-666
S = SOT323-6L
Z = SOD-123
Packing
FILM = Tape and reel
xx
xx FILM
Doc ID 12563 Rev 2
5/14
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