®
BAT20J
HIGH EFFICIENCY SWITCHING AND
ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
I
R
25°C(max) @ 15V
Tj (max)
1A
23 V
12 µA
150 °C
A
K
FEATURES AND BENEFITS
Low conduction losses
Very low reverse current
Negligible switching losses
Low capacitance diode
Low forward and reverse recovery times
Extremely fast switching
Surface mount device
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SOD-323
DESCRIPTION
The BAT20J is using 23V schottky barrier diode
encapsulated on a SOD-323 package. This is spe-
cially suited for switching mode in mobile phone
and PDA power management applications or LED
driver circuits (step up converters).
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Tj
TL
* :
Parameter
Repetitive peak reverse voltage
Repetitive peak forward current
Average forward current
Maximum storage temperature range
Maximum operating junction temperature *
Maximum temperature for soldering during *
δ
= 0.38
Surge non repetitive forward current (t
p
=10ms sinusoidal)
Value
23
2
1
5
- 65 to +150
150
260
Unit
V
A
A
A
°C
°C
°C
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth
(
j
−
a
)
Order code
Part Number
BAT20JFILM
April 2004 - Ed: 1
Marking
20
1/5
BAT20J
THERMAL RESISTANCE
Symbol
R
th (j-a)
Junction to Ambient (*)
Parameter
Value
600
Unit
°C/W
(*) Mounted on epoxy board without copper heat sink.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
Parameters
Reverse leakage current
(see
note 1)
Reverse leakage current
Tests conditions
Tj = 25°C
V
R
= 5 V
V
R
= 8 V
V
R
= 15 V
V
R
= 5 V
V
R
= 8 V
V
R
= 15 V
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1 A
Min.
Typ.
0.65
0.88
3.00
55
70
120
0.28
0.35
0.54
Max.
2
3
12
120
150
250
0.31
0.40
0.62
V
Unit
µA
I
R
*
Tj = 85°C
V
F
**
Forward voltage drop
Tj = 25°C
* Pulse test tp = 380 µs,
δ
< 2%
** Pulse test tp = 5 ms,
δ
< 2%
Note 1:
I
R
at 23 V and Tj = 25°C is equal to 60 µA typ.
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
C
d
Parameters
Diode capacitance
Tests conditions
V
R
= 5 V
F = 1 MHz
Min.
Typ.
20
Max.
30
Unit
pF
To evaluate the maximum conduction losses, use the following equations :
P = 0.32 x I
F(AV)
+ 0.23 x I
F2(RMS)
2/4
BAT20J
Fig. 1:
Peak forward current versus ambient
temperature (δ = 0.11).
I
P
(A)
3.0
Printed circuit board FR4
S
CU
=2.25mm
2
Fig. 2:
Average forward current versus ambient
temperature (
δ
= 0.5).
I
F(AV)
(A)
0.40
0.35
0.30
Printed circuit board FR4
S
CU
=2.25mm
2
2.5
2.0
0.25
0.20
0.15
1.5
1.0
T
0.5
0.10
0.05
0.00
T
0.0
0
δ
=tp/T
25
tp
50
T
amb
(°C)
75
100
125
150
δ
=tp/T
0
25
tp
50
T
amb
(°C)
75
100
125
150
Fig. 3:
Relative variation of thermal impedance
junction to ambient versus pulse duration .
Z
th(j-a)
/R
th(j-a)
1.E+00
Single pulse
2
S
CU
=2.25mm
Fig. 4:
Reverse leakage currrent versus reverse
voltage applied (typical values).
I
R
(µA)
1.E+04
T
j
=150°C
1.E+03
1.E-01
1.E+02
T
j
=85°C
1.E+01
1.E-02
T
j
=25°C
1.E+00
t
p
(s)
1.E-03
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E-01
0
2
4
6
8
10
V
R
(V)
12
14
16
18
20
22
24
Fig. 5:
Relative variation of reverse leakage
currrent versus junction temperature (typical
values).
I
R
(T
j
) / I
R
(T
j
=25°C)
1.E+04
V
R
=5V
Fig. 6:
Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
100
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
1.E+03
1.E+02
10
1.E+01
1.E+00
T
j
(°C)
1.E-01
0
25
50
75
100
125
150
V
R
(V)
1
1
10
100
3/5
BAT20J
Fig. 7-1:
Forward voltage drop versus forward
current (typical values, high level).
I
FM
(A)
1.E+01
T
j
=150°C
Fig. 7-2:
Forward voltage drop versus forward
current (low level).
I
FM
(A)
1.0
0.9
1.E+00
0.8
0.7
T
j
=150°C
(typical values)
1.E-01
T
j
=85°C
0.6
0.5
T
j
=85°C
(typical values)
T
j
=25°C
(typical values)
1.E-02
T
j
=25°C
0.4
0.3
0.2
T
j
=25°C
(maximum values)
1.E-03
V
FM
(V)
1.E-04
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0.1
0.0
0.0
0.1
0.2
0.3
0.4
V
FM
(V)
0.5
0.6
0.7
Fig. 8:
Thermal resistance junction to ambient
versus copper surface under tab (epoxy
printed circuit board FR4, e
CU
=35µm, typical
values).
R
th(j-a)
(°C/W)
600
550
500
450
400
350
300
250
200
150
100
50
0
0
5
10
15
20
25
30
35
40
45
50
Fig. 9:
Thermal resistance junction to ambient
versus power dissipation (epoxy printed circuit
board FR4, e
CU
=35µm, typical values).
R
th(j-a)
(°C/W)
700
650
600
550
500
450
400
350
300
250
200
150
100
S
CU
=2.25mm
2
T
amb
=25°C
S
Cu
(mm
²)
50
0
0
50
100
150
P(mW
)
200
250
300
350
400
4/5
BAT20J
PACKAGE MECHANICAL DATA
SOD-323
DIMENSIONS
H
b
E
A1
REF.
Millimeters
Min.
Max.
1.13
0
0.25
0.1
1.52
1.11
2.3
0.1
0.1
0.1
0.44
0.25
1.8
1.35
2.7
0.46
0.41
0
Inches
Min.
Max.
0.045
0.004
0.017
0.01
0.071
0.053
0.106
0.02
0.016
0.01
0.004
0.06
0.044
0.09
0.004
0.004
A
A1
b
D
A
c
D
E
H
L
Q1
c
Q1
L
Ordering type
BAT20JFILM
■
Marking
20
Package
SOD-323
Weight
0.005g
Base qty
3000
Delivery mode
Tape & reel
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2004 STMicroelectronics - All rights reserved.
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