BULD742C
High voltage fast-switching
NPN power transistor
Features
■
■
■
■
Low spread of dynamic parameters
High voltage capability
Minimum lot-to-lot spread for reliable operation
Very high switching speed
1
3
Applications
■
■
Electronic ballast for fluorescent lighting
Switch mode power supplies
DPAK
Description
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
BULD742C
Package
DPAK
Packaging
Tape & reel
Order code
BULD742CT4
August 2007
Rev 1
1/12
www.st.com
12
Contents
BULD742C
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
BULD742C
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
J
Absolute maximum rating
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0, I
B
= 2 A, t
p
< 10 ms)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 5ms)
Total dissipation at T
c
= 25°C
Storage temperature
Max. operating junction temperature
Value
1050
400
V
(BR)EBO
4
8
2
4
45
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
°C
°C
Table 3.
Symbol
Thermal data
Parameter
Value
2.78
73
Unit
°C/W
°C/W
R
thj-case
Thermal resistance junction - case
R
thj-amb
Thermal resistance junction - ambient
3/12
Electrical characteristics
BULD742C
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 4.
Symbol
I
CES
I
CEO
V
(BR)EBO
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
= 0)
Collector cut-off current
(I
B
= 0)
Emitter base breakdown
voltage (I
C
= 0)
Collector-emitter
sustaining voltage
(I
B
= 0)
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Resistive load
Storage time
Fall time
Repetitive avalanche
energy
Test Conditions
V
CE
=1050 V
V
CE
=400 V
I
E
= 1 mA
15
Min.
Typ.
0.2
10
19
Max.
10
250
24
Unit
µA
µA
V
V
CEO(sus)
(1)
I
C
=10 mA
I
C
= 1 A
I
C
= 3.5 A
I
C
= 3.5 A
I
C
= 0.1 A
I
C
= 0.8 A
I
C
= 2 A
_
_ _
I
B
= 0.2 A
I
B
= 1 A
I
B
= 1 A
_
V
CE
= 5 V
_ _
V
CE
= 3 V
V
CC
= 125 V
400
450
0.15
0.6
1.1
0.5
1.5
1.5
100
50
V
V
V
V
V
CE(sat) (1)
V
BE(sat) (1)
h
FE (1)
48
25
75
35
t
s
t
f
E
ar
I
B1
= -I
B2
= 400 mA
t
p
= 300
µs
L = 2 mH
V
BE(off)
= -5 V
V
BE(off)
= -5 V
C = 1.8 nF
6
2.4
350
3.5
500
µs
ns
mJ
1. Pulsed duration = 300 ms, duty cycle
≤
1.5%
4/12
BULD742C
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Derating curve
Figure 4.
Output characteristics
Figure 5.
DC current gain
Figure 6.
DC current gain
Figure 7.
Collector - emitter saturation
voltage
5/12
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