STPSC8H065
Datasheet
650 V, 8 A high surge silicon carbide power Schottky diode
A
K
K
Features
•
•
•
•
No reverse recovery charge in application current range
Switching behavior independent of temperature
High forward surge capability
Insulated package TO-220AC Ins:
–
Insulated voltage: 2500 V
RMS
–
Typical package capacitance: 7 pF
Power efficient product
A
TO-220AC
K
A
K
TO-220AC insulated
K
•
K
A
NC
NC
A
Applications
•
•
•
•
•
Switch mode power supply
PFC
DCDC converters
LLC topologies
Boost diode
D²PAK
DPAK
Description
This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is
manufactured using a silicon carbide substrate. The wide band gap material allows
the design of a Schottky diode structure with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and ringing patterns are negligible. The
minimal capacitive turn-off behavior is independent of temperature.
This
STPSC8H065
is especially suited for use in PFC applications. This ST SiC
diode will boost the performance in hard switching conditions. Its high forward surge
capability ensures a good robustness during transient phases.
Product status
STPSC8H065
Product summary
Symbol
I
F(AV)
V
RRM
T
j(max.)
Product label
Value
8A
650 V
175 °C
DS9225
-
Rev 7
-
February 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STPSC8H065
Characteristics
1
Characteristics
Table 1.
Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward current
TO-220AC, DPAK, D
2
PAK, T
c
= 140 °C
(1)
, DC
TO-220AC Ins,T
c
= 95 °C
(1)
t
p
= 10 ms sinusoidal, T
c
= 25 °C
I
FSM
Surge non repetitive forward
current
t
p
= 10 ms sinusoidal, T
c
= 125 °C
t
p
= 10 µs square, T
c
= 25 °C
I
FRM
T
stg
T
j
Repetitive peak forward current
Storage temperature range
Operating junction temperature range
(2)
TO-220AC, DPAK, D
2
PAK, T
c
= 140 °C
(1)
, T
j
= 175 °C, δ = 0.1
TO-220AC Ins,T
c
= 95 °C
(1)
, T
j
= 175 °C, δ = 0.1
Parameter
Value
650
22
8
75
69
420
33
-55 to +175
-40 to +175
A
°C
°C
A
Unit
V
A
A
1. Value based on R
th(j-c)
max.
2. (dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2.
Thermal resistance parameters
Symbol
R
th(j-c)
Junction to case
Parameter
TO-220AC, DPAK, D
2
PAK
TO-220AC Ins
Typ. value
1.3
2.45
Max. value
1.6
3.8
Unit
°C/W
Table 3.
Static electrical characteristics
Symbol
I
R
(1)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
R
= V
RRM
Min.
-
-
-
-
Typ.
7
65
1.56
1.98
Max.
80
335
1.75
2.50
Unit
µA
V
F
(2)
Forward voltage drop
I
F
= 8 A
V
1. t
p
= 10 ms, δ < 2%
2. t
p
= 500 μs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 1.35 x I
F(AV)
+ 0.144 x I
F2(RMS)
For more information, please refer to the following application notes related to the power losses :
•
AN604: Calculation of conduction losses in a power rectifier
•
AN4021: Calculation of reverse losses on a power diode
DS9225
-
Rev 7
page 2/17
STPSC8H065
Characteristics
Table 4.
Dynamic electrical characteristics
Symbol
Q
cj
C
j
Parameter
Total capacitive charge
Total capacitance
V
R
= 400 V
V
R
= 0 V, T
c
= 25 °C, F = 1 MHz
V
R
= 400 V, T
c
= 25 °C, F = 1 MHz
Test conditions
Typ.
23.5
414
38
Unit
nC
pF
1.
VR
Most accurate value for the capacitive charge:
Qcj VR = ∫ C j V dV
0
DS9225
-
Rev 7
page 3/17
STPSC8H065
Characteristics (curves)
1.1
Characteristics (curves)
Figure 2.
Forward voltage drop versus forward current
(typical values, high level)
I
F
(A)
80
Pulse test : t
p
=500µs
Pulse test : t
p
=500µs
Figure 1.
Forward voltage drop versus forward current
(typical values, low level)
I
F
(A)
16
14
12
10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
70
T
a
=100 °C
T
a
=25 °C
T
a
=150 °C
T
a
=175 °C
60
50
40
30
20
10
T
a
=25 °C
T
a
=100 °C
T
a
=150 °C
V
F
(V)
0
T
a
=175 °C
V
F
(V)
5
6
7
8
3.5
0
1
2
3
4
Figure 3.
Reverse leakage current versus reverse voltage
applied (typical values)
I
R
(µA)
Figure 4.
Peak forward current versus case temperature
(TO-220AC, DPAK, D
2
PAK)
80
70
I
M
(A)
δ =0.1
1.E+03
T
1.E+02
T
j
=175 °C
60
50
40
δ =0.3
δ =0.5
δ=tp/T
tp
1.E+01
T
j
=150 °C
1.E+00
30
20
T
j
=25 °C
1.E-01
δ =1
δ =0.7
V
R
(V)
10
0
1.E-02
0
50
100 150 200 250 300 350 400 450 500 550 600 650
T
C
(°C)
0
25
50
75
100
125
150
175
DS9225
-
Rev 7
page 4/17
STPSC8H065
Characteristics (curves)
Figure 5.
Peak forward current versus case temperature
(TO-220AC Ins)
I
M
(A)
60
δ =0.1
Figure 6.
Junction capacitance versus reverse voltage
applied (typical values)
Cj (pF)
500
T
450
400
tp
50
δ=tp/T
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
40
δ =0.3
350
300
30
250
200
20
10
δ =0.5
150
100
δ =1
δ =0.7
50
V
R
(V)
0.1
1 .0
10.0
100.0
1000.0
T
C
(°C)
25
50
75
100
125
150
175
0
0
0
Figure 7.
Relative variation of thermal impedance junction
Figure 8.
Relative variation of thermal impedance junction
to case versus pulse duration (TO-220AC, DPAK and
to case versus pulse duration (TO-220AC Ins)
D²PAK)
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
t
p
(s)
t
p
(s)
1.E-03
1.E-02
1.E-01
1.E+00
0.0
1.E-05
0.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E-04
DS9225
-
Rev 7
page 5/17
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