BD433/5/7
BD434/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
s
s
SGS-THOMSON PREFERRED SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD433, BD435, and BD437 are silicon
epitaxial-base NPN power transistors in Jedec
SOT-32 plastic package, intented for use in
medium power linear and switching applications.
The BD433 is especially suitable for use in
car-radio output stages.
The complementary PNP types are BD434,
BD436, and BD438 respectively.
3
2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
≤
10 ms)
Base Current
Total Dissipation at T
c
≤ 25
C
o
Value
BD433
BD434
22
22
22
BD435
BD436
32
32
32
5
4
7
1
36
-65 to 150
150
BD437
BD438
45
45
45
Unit
V
V
V
V
A
A
A
W
o
o
Storage Temperature
Max. Operating Junction Temperature
C
C
For PNP types voltage and current values are negative.
June 1997
1/4
BD433/434/435/436/437/438
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
3.5
100
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
for
BD433/434
for
BD435/436
for
BD437/438
for
BD433/434
for
BD435/436
for
BD437/438
V
EB
= 5 V
I
C
= 100 mA
for
BD433/434
for
BD435/436
for
BD437/438
I
B
= 0.2 A
for
BD433/434
for
BD435/436
for
BD437/438
V
CE
= 5 V
V
CE
= 1 V
for
BD433/434
for
BD435/436
for
BD437/438
V
CE
= 5 V
for
BD433/434
for
BD435/436
for
BD437/438
V
CE
= 1 V
V
CE
= 1 V
for
BD433/434
for
BD435/436
for
BD437/438
V
CE
= 1 V
V
CE
= 1 V
3
40
40
30
85
50
50
40
1.4
MHz
22
32
45
0.2
0.2
0.2
0.58
1.1
1.1
1.2
130
130
130
140
0.5
0.5
0.6
V
CB
= 22 V
V
CB
= 32 V
V
CB
= 45 V
V
CE
= 22 V
V
CE
= 32 V
V
CE
= 45 V
Min.
Typ.
Max.
100
100
100
100
100
100
1
Unit
µA
µA
µA
µA
µA
µA
mA
V
V
V
V
V
V
V
V
V
V
I
CES
I
EBO
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
I
C
= 2 A
V
BE
∗
Base-Emitter Voltage
I
C
= 10 mA
I
C
= 2 A
h
FE
∗
DC Current Gain
I
C
= 10 mA
I
C
= 500 mA
I
C
= 2 A
h
FE1
/h
FE2
∗
Matched Pair
f
T
Transition frequency
IC = 500 mA
I
C
= 250 mA
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
2/4
BD433/434/435/436/437/438
SOT-32 (TO-126) MECHANICAL DATA
mm
MIN.
A
B
b
b1
C
c1
D
e
e3
F
G
H
H2
2.15
3
4.15
3.8
3.2
2.54
0.084
0.118
7.4
10.5
0.7
0.49
2.4
1.0
15.4
2.2
4.65
0.163
0.150
0.126
0.100
TYP.
MAX.
7.8
10.8
0.9
0.75
2.7
1.3
16.0
MIN.
0.291
0.413
0.028
0.019
0.040
0.039
0.606
0.087
0.183
inch
TYP.
MAX.
0.307
0.445
0.035
0.030
0.106
0.050
0.629
DIM.
H2
0016114
3/4
BD433/434/435/436/437/438
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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