BYV29B-500
Ultrafast power diode
13 July 2018
Product data sheet
1. General description
Ultrafast power diode in a SOT404 (D2PAK) surface-mountable plastic package.
2. Features and benefits
•
•
•
•
•
•
Fast switching
High thermal cycling performance
Low forward volt drop
Low thermal resistance
Soft recovery minimizes power-consuming oscillations
Surface mountable package
3. Applications
•
•
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
reverse voltage
average forward
current
Conditions
DC
δ = 0.5 ; T
mb
≤ 123 °C; SQW;
Fig. 1;
Fig. 2
Min
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
0.9
1.05
1.2
50
Max
500
9
18
100
110
1.03
1.25
1.4
60
Unit
V
A
A
A
A
V
V
V
ns
repetitive peak forward δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 123 °C;
current
SQW
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; SIN
t
p
= 8.3 ms; T
j(init)
= 25 °C; SIN
I
F
= 8 A; T
j
= 150 °C;
Fig. 4
I
F
= 8 A; T
j
= 25 °C;
Fig. 4
I
F
= 20 A; T
j
= 25 °C;
Fig. 4
Static characteristics
V
F
forward voltage
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/s;
T
j
= 25 °C;
Fig. 5; Fig. 6
WeEn Semiconductors
BYV29B-500
Ultrafast power diode
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
n.c.
K
A
K
no connection
cathode[1]
anode
mounting base; cathode
1
2
3
Simplified outline
mb
Graphic symbol
K
A
001aaa020
D2PAK (SOT404)
[1]
it is not possible to make a connection to Pin 2 of the SOT404 package
6. Ordering information
Table 3. Ordering information
Type number
BYV29B-500
Package
Name
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3
leads (one lead cropped)
Version
SOT404
BYV29B-500
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
13 July 2018
2 / 10
WeEn Semiconductors
BYV29B-500
Ultrafast power diode
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
16
P
tot
(W)
12
0.5
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average forward current
repetitive peak forward
current
non-repetitive peak
forward current
storage temperature
junction temperature
Conditions
Min
-
-
Max
500
500
500
9
18
100
110
150
150
003aaj588
Unit
V
V
V
A
A
A
A
°C
°C
DC
δ = 0.5 ; T
mb
≤ 123 °C; SQW;
Fig. 1;
Fig. 2
δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 123 °C; SQW
t
p
= 10 ms; T
j(init)
= 25 °C; SIN
t
p
= 8.3 ms; T
j(init)
= 25 °C; SIN
-
-
-
-
-
-40
-
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δ=1
12
P
tot
(W)
2.2
8
2.8
4.0
a = 1.57
1.9
0.2
8
0.1
4
4
0
0
4
8
12
I
F(AV)
(A)
16
0
0
2
4
6
8
10
I
F(AV)
(A)
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 0.890 V; R
s
= 0.019 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 0.890 V; R
s
= 0.019 Ω
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
BYV29B-500
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
13 July 2018
3 / 10
WeEn Semiconductors
BYV29B-500
Ultrafast power diode
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
R
th(j-mb)
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
Conditions
Fig. 3
Min
-
Typ
-
Max
2.5
Unit
K/W
R
th(j-a)
in free air
[1]
-
50
-
K/W
[1]
Device mounted on a FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
10
Z
th(j-mb)
(K/W)
1
001aag913
10
- 1
P
δ=
t
p
T
10
- 2
t
p
10
- 3
10
- 6
10
- 5
10
- 4
10
- 3
10
- 2
t
T
1
10
t
p
(s)
10
- 1
Fig. 3. Transient thermal impedance from junction to mounting base as a function of pulse width
BYV29B-500
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
13 July 2018
4 / 10
WeEn Semiconductors
BYV29B-500
Ultrafast power diode
9. Characteristics
Table 6. Characteristics
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 8 A; T
j
= 150 °C;
Fig. 4
I
F
= 8 A; T
j
= 25 °C;
Fig. 4
I
F
= 20 A; T
j
= 25 °C;
Fig. 4
I
R
reverse current
V
R
= 500 V; T
j
= 25 °C
V
R
= 500 V; T
j
= 100 °C
Dynamic characteristics
t
rr
I
RM
Q
r
V
FR
reverse recovery time
peak reverse recovery
current
recovered charge
forward recovery
voltage
30
I
F
(A)
20
Min
-
-
-
-
-
-
-
-
-
Typ
0.9
1.05
1.2
2
0.1
50
4
40
2.5
Max
1.03
1.25
1.4
50
0.35
60
5.5
60
-
Unit
V
V
V
µA
mA
ns
A
nC
V
Static characteristics
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/s;
T
j
= 25 °C;
Fig. 5; Fig. 6
I
F
= 10 A; V
R
= 30 V; dI
F
/dt = 50 A/s;
T
j
= 100 °C;
Fig. 5; Fig. 7
I
F
= 2 A; V
R
= 30 V; dI
F
/dt = 20 A/s;
T
j
= 25 °C;
Fig. 8; Fig. 5
I
F
= 10 A; dI
F
/dt = 10 A/s; T
j
= 25 °C;
Fig. 9
003aaj589
I
F
dl
F
dt
t
rr
time
(1)
(2)
(3)
25 %
Q
r
100 %
10
I
R
0
0
0.5
1
1.5
2
I
RM
003aac562
V
F
(V)
V
o
= 0.890 V; R
s
= 0.019 Ω
(1) T
j
= 150 °C; typical values
(2) T
j
= 150 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 4. Forward current as a function of forward voltage
Fig. 5.
BYV29B-500
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
13 July 2018
5 / 10
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