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AP9T16AGH-HF

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 19.5A (Tc) Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 20mΩ @ 12A, 4.5V max Power dissipation (Ta=25°C): 12.5W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size50KB,5 Pages
ManufacturerAPEC
Download Datasheet Parametric View All

AP9T16AGH-HF Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 19.5A (Tc) Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 20mΩ @ 12A, 4.5V max Power dissipation (Ta=25°C): 12.5W(Tc) Type: N-channel

AP9T16AGH-HF Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C19.5A(Tc)
Gate-source threshold voltage1.2V @ 250uA
Drain-source on-resistance20mΩ @ 12A,4.5V
Maximum power dissipation (Ta=25°C)12.5W(Tc)
typeN channel
AP9T16AGH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Lower Gate Charge
Capable of 2.5V Gate Drive
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
20V
20mΩ
19.5A
S
Description
AP9T16A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow technique
and suited for high current application due to the low connection
resistance.
G
D
S
TO-252(H)
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 4.5V
Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Total Power Dissipation
3
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
+12
19.5
12.3
80
12.5
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
10
62.5
Units
℃/W
℃/W
1
201501162
Data and specifications subject to change without notice
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