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MTC3587DL8

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 4.9A, 3.9A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 45mΩ @ 4.4A, 4.5V ;80mΩ @ 3.2A, 4.5V Maximum power dissipation (Ta=25°C): 1.5W Type: N-channel and P-channel 20V,-20V/4.9A,-3.9A/N+P
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size505KB,13 Pages
ManufacturerCystech
Download Datasheet Parametric View All

MTC3587DL8 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 4.9A, 3.9A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 45mΩ @ 4.4A, 4.5V ;80mΩ @ 3.2A, 4.5V Maximum power dissipation (Ta=25°C): 1.5W Type: N-channel and P-channel 20V,-20V/4.9A,-3.9A/N+P

MTC3587DL8 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C4.9A,3.9A
Gate-source threshold voltage1.2V @ 250uA
Drain-source on-resistance45mΩ @ 4.4A,4.5V;80mΩ @ 3.2A,4.5V
Maximum power dissipation (Ta=25°C)1.5W
typeN channel and P channel
CYStech Electronics Corp.
N- and P-Channel Enhancement Mode Power MOSFET
Spec. No. : C093L8
Issued Date : 2016.09.30
Revised Date : 2017.09.29
Page No. : 1/13
MTC3587DL8
Features
BV
DSS
I
D
@ T
A
=25°C
Simple drive requirement
R
DSON
(
TYP
.)
Low gate charge
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
N-CH
20V
4.9A(V
GS
=4.5V)
32mΩ(V
GS
=4.5V)
43mΩ(V
GS
=2.5V)
62mΩ(V
GS
=1.8V)
P-CH
-20V
-3.9A(V
GS
=-4.5 V)
50mΩ(V
GS
=-4.5V)
62mΩ(V
GS
=-2.5V)
81mΩ(V
GS
=-1.8V)
Equivalent Circuit
MTC3587DL8
Outline
DFNWB3×2-8L-B
G:Gate S:Source D:Drain
Ordering Information
Device
MTC3587DL8-0-T1-G
Package
DFNWB3×2-8L-B
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTC3587DL8
CYStek Product Specification
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