LRB751V-40T1G datasheet, PDF - EEWORLD Datasheet

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LRB751V-40T1G: DescriptionDC reverse withstand voltage (Vr): 30V Average rectified current (Io): 30mA Forward voltage drop (Vf): 370mV @ 1mA VR=30V IO=30mA VF=0.37V@1mA; CategoryDiscrete semiconductor diode; File Size221KB，3 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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LRB751V-40T1G Overview

DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 30mA Forward voltage drop (Vf): 370mV @ 1mA VR=30V IO=30mA VF=0.37V@1mA

LRB751V-40T1G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	LRC
package instruction	R-PDSO-G2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.37 V
JESD-30 code	R-PDSO-G2
Maximum non-repetitive peak forward current	0.2 A
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Maximum output current	0.03 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.2 W
Maximum repetitive peak reverse voltage	40 V
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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LRB751V-40T1G

S-LRB751V-40T1G

Schottky Barrier Diode

1. FEATURES

●

We declare that the material of product compliance with

RoHS requirements and Halogen Free.

S- prefix for automotive and other applications requiring

unique site and control change requirements; AEC-Q101

qualified and PPAP capable.

●

SOD323(SC-76)

●

Low reverse current and low voltage.

High reliability

2. APPLICATIONS

●

Low-power rectification

3. DEVICE MARKING AND ORDERING INFORMATION

Device

LRB751V-40T1G

LRB751V-40T3G

Marking

Shipping

3000/Tape&Reel

10000/Tape&Reel

4. MAXIMUM RATINGS(Ta = 25º

Parameter

Peak Reverse Voltage

DC Reverse Voltage

Mean Rectifying Current

Peak Forward Surge Current

Symbol

VRM

IFSM

Limits

200

Unit

5. THERMAL CHARACTERISTICS

Parameter

Total Device Dissipation,

FR−5 Board (Note 1) @ TA = 25ºC

Derate above 25º

Thermal Resistance,

Junction–to–Ambient(Note 1)

Junction and Storage temperature

1. FR–5 = 1.0×0.75×0.062 in.

TJ,Tstg

−40∼+125

RΘJA

Symbol

200

1.57

635

mW/º

C/W

Limits

Unit

6. ELECTRICAL CHARACTERISTICS (Ta= 25

)

Characteristic

Forward voltage(IF=1mA)

Reverse Current(VR=30V)

Diode Capacitance(VR = 1V, f = 1.0 MHz)

Symbol

Min.

Typ.

Max.

0.37

0.5

Unit

μA

Leshan Radio Company, LTD.

Rev.B Feb 2016

1/3

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