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DB107

CategoryDiscrete semiconductor    diode   
File Size174KB,3 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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DB107 Parametric

Parameter NameAttribute value
MakerLRC
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current50 A
Number of components4
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage1000 V
surface mountNO
DB102 Thru DB107
High Current Glass Passivated Molding Single-Phase Bridge Rectifier
Reverse Voltage 100 to 1000V
FEATURES
l
l
l
l
Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
High current capacity with small package
Glass passivated chip junctions
Superior thermal conductivity
High IFSM
Forward Current 1.0 A
l
1.
Maximum & Thermal Characteristics Ratings
at 25℃ ambient temperature unless otherwise specified.
Parameter Symbol
Maximum repetitive voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum DC reverse current TA=25
at rated DC blocking voltage TA=125℃
Average rectified forward current 60Hz Sine
wave Resistance load with Ta=55℃
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
Max instantaneous forward voltage at 1.0A
Thermal Resistance
Between junction and ambient
Between junction and lead
Operating junction temperature
Storage temperature
R
θJ-A
R
θJ-L
TJ
Tstg
134
20
-55~150
-55~150
℃/W
Io
Symbol
V
RRM
V
RMS
V
DC
IR
DB102
100
70
100
DB103
200
140
200
DB104
400
280
400
5
500
1.0
DB105
600
420
600
DB106
800
560
800
DB107
1000
700
1000
Unit
V
V
V
µA
A
IFSM
VF
50
1.05
A
V
2
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