NIKO-SEM
P-Channel Enhancement Mode
Field Effect Transistor
PM597BA
SOT-23(S)
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V
(BR)DSS
-20V
R
DS(ON)
30mΩ
I
D
-5.3A
D
G
S
Features
• Pb−Free, Halogen Free and RoHS compliant.
• Low R
DS(on)
to Minimize Conduction Losses.
• Ohmic Region Good R
DS(on)
Ratio.
• Optimized Gate Charge to Minimize Switching Losses.
Applications
• Protection Circuits Applications.
• Logic/Load Switch Circuits Applications.
G: GATE
D: DRAIN
S: SOURCE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
3
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
SYMBOL
V
GS
I
D
I
DM
P
D
T
j
, T
stg
LIMITS
±12
-5.3
-4.3
-16
1.4
0.9
-55 to 150
W
°C
A
UNITS
V
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
2
Junction-to-Ambient
2
1
2
SYMBOL
R
JA
R
JA
TYPICAL
MAXIMUM
90
130
UNITS
°C/W
t
≦10s
Steady-State
Pulse width limited by maximum junction temperature.
The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper.
9
The Power dissipation is based on R
JA
t
≦10s
value.
REV 1.1
1
G-14-1
NIKO-SEM
P-Channel Enhancement Mode
Field Effect Transistor
PM597BA
SOT-23(S)
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= -250A
V
DS
= V
GS
, I
D
= -250A
V
DS
= 0V, V
GS
= ±12V
V
DS
= -16V, V
GS
= 0V
V
DS
= -10V, V
GS
= 0V, T
J
= 55 °C
V
GS
= -2.5V, I
D
= -3.5A
Drain-Source On-State
Resistance
1
Forward Transconductance
1
R
DS(ON)
g
fs
V
GS
= -4.5V, I
D
= -3.5A
V
GS
= -10V, I
D
= -3.5A
V
DS
= -5V, I
D
= -3.5A
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
Fall Time
2
2
LIMITS
UNIT
MIN TYP MAX
-20
-0.7
-0.8
-1.3
±100
-1
-10
40
30
25
16
58
43
30
S
mΩ
V
nA
A
C
iss
C
oss
C
rss
Q
g(VGS=4.5V)
Q
g(VGS=2.5V)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= -10V, V
GS
= -4.5V
I
D
-3.5A, R
G
= 6Ω
V
DS
= -10V , V
GS
=-4.5V,
I
D
= -3.5A
V
GS
= 0V, V
DS
= -10V, f = 1MHz
801
115
92
8.7
5.4
1.2
2.6
19
30
55
20
nS
nC
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25 °C)
Continuous Current
Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
2
I
S
V
SD
t
rr
Qrr
I
F
= -3.5A, V
GS
= 0V
I
F
= -3.5A, dl
F
/dt = 100A /
S
24
6
-1
-1.3
A
V
nS
nC
Pulse test : Pulse Width
300
sec,
Duty Cycle
2％.
Independent of operating temperature.
REV 1.1
2
G-14-1
NIKO-SEM
P-Channel Enhancement Mode
Field Effect Transistor
PM597BA
SOT-23(S)
Halogen-Free & Lead-Free
Output Characteristics
15
Transfer Characteristics
15
-I
D
, Drain-To-Source Current(A)
12
VGS=-1.9V
-I
D
, Drain-To-Source Current(A)
VGS=‐10V
VGS=‐7V
VGS=‐4.5V
VGS=‐2.5V
VGS=-2V
12
VGS=-1.8V
9
9
6
VGS=-1.6V
6
25℃
3
125℃
‐20℃
0
0
1
2
3
4
5
3
0
0
1
2
3
4
5
-V
DS
, Drain-To-Source Voltage(V)
-V
GS
, Gate-To-Source Voltage(V)
Gate charge Characteristics
4.5
900
VDS=-10V
ID=-3.5A
3.6
800
700
Capacitance Characteristic
-V
GS
, Gate-To-Source Voltage(V)
CISS
C , Capacitance(pF)
600
500
400
300
200
COSS
100
CRSS
2.7
1.8
0.9
0
0
2
4
6
8
10
0
0
5
10
15
20
Qg , Total Gate Charge(nC)
-V
DS
, Drain-To-Source Voltage(V)
On-Resistance VS Gate-To-Source
0.1
0.1
On-Resistance VS Drain Current
R
DS(ON)
ON-Resistance(OHM)
0.08
R
DS(ON)
ON-Resistance(OHM)
0.08
0.06
0.06
VGS=-2.5V
0.04
VGS=-4.5V
0.04
ID=-3.5A
0.02
0.02
VGS=-10V
0
0
2
4
6
8
10
0
0
3
6
9
12
15
-V
GS
, Gate-To-Source Voltage(V)
-I
D
, Drain-To-Source Current(A)
REV 1.1
3
G-14-1
NIKO-SEM
P-Channel Enhancement Mode
Field Effect Transistor
PM597BA
SOT-23(S)
Halogen-Free & Lead-Free
On-Resistance VS Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
VGS=-4.5V
ID=-3.5A
Source-Drain Diode Forward Voltage
100
Normalized Drain to Source
ON-Resistance
-I
S
, Source Current(A)
10
150℃
1
25℃
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature(˚C)
-V
SD
, Source-To-Drain Voltage(V)
Safe Operating Area
100
Operation in This
Area is Limited by
RDS(ON)
Single Pulse Maximum Power Dissipation
15
Single Pulse
RθJA = 130˚C/W
TA=25˚C
12
-I
D
, Drain Current(A)
10
Power(W)
9
1
1ms
10ms
0.1
NOTE :
1.VGS= 4.5V
2.TA=25˚C
3.RθJA = 130˚C/W
4.Single Pulse
0.1
1
10
100ms
DC
6
3
0.01
100
0
0.001
0.01
0.1
1
10
100
-V
DS
, Drain-To-Source Voltage(V)
Single Pulse Time(s)
Transient Thermal Response Curve
10
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
Transient Thermal Resistance
r(t) , Normalized Effective
1
Notes
0.1
1.Duty cycle, D= t1 / t2
2.RthJA = 130
℃/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
T
1
, Square Wave Pulse Duration[sec]
REV 1.1
4
G-14-1
京公网安备 11010802033920号
EEWORLD
