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P2610BD

Description
Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 36A Gate-source threshold voltage: 2.3V @ 250uA Drain-source on-resistance: 26.8mΩ @ 10A, 10V Maximum power dissipation ( Ta=25°C): 78W Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size168KB,4 Pages
ManufacturerNIKO-SEM
Websitehttp://www.niko-sem.com/
Download Datasheet Parametric View All

P2610BD Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 36A Gate-source threshold voltage: 2.3V @ 250uA Drain-source on-resistance: 26.8mΩ @ 10A, 10V Maximum power dissipation ( Ta=25°C): 78W Type: N-channel

P2610BD Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)100V
Continuous drain current (Id) at 25°C36A
Gate-source threshold voltage2.3V @ 250uA
Drain-source on-resistance26.8mΩ @ 10A,10V
Maximum power dissipation (Ta=25°C)78W
typeN channel
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P2610BD
TO-252
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V
(BR)DSS
100V
R
DS(ON)
26.8mΩ
I
D
36A
G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1
2
1
2
SYMBOL
V
DS
V
GS
LIMITS
100
±20
36
23
80
13.9
9.7
78
31
UNITS
V
V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
I
AS
A
L = 0.1mH
T
C
= 25 °C
T
C
= 100 °C
E
AS
P
D
T
J
, T
stg
mJ
W
°C
-55 to 150
SYMBOL
R
JC
R
JA
TYPICAL
MAXIMUM
1.6
UNITS
°C / W
62.5
Pulse width limited by maximum junction temperature.
Calculated continuous current based on maximum allowable junction temperature.
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance
1
REV1.0
1
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 80V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125 °C
V
GS
= 4.5V, I
D
= 10A
V
GS
= 10V , I
D
= 10A
24
22
100
1.3
1.8
2.3
±100
1
10
35
26.8
A
nA
V
LIMITS
UNIT
MIN TYP MAX
R
DS(ON)
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