NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PKCH2BB
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V
(BR)DSS
30V
R
DS(ON)
0.99mΩ
I
D
4
D
229A
G
Features
• Pb−Free, Halogen Free and RoHS compliant.
• Low R
DS(on)
to Minimize Conduction Losses.
• Ohmic Region Good R
DS(on)
Ratio.
• Optimized Gate Charge to Minimize Switching Losses.
Applications
• Protection Circuits Applications.
• Computer for DC to DC Converters Applications.
#1 S
S S
G
S
D
D
D
D
G. GATE
D. DRAIN
S. SOURCE
100% UIS Tested
100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
4
SYMBOL
V
DS
V
GS
LIMITS
30
±20
229
145
350
50
40
86
369.8
104
41
5
3.2
-55 to 150
UNITS
V
V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
Continuous Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
3
T
A
= 25 °C
T
A
= 70 °C
A
I
D
I
AS
L = 0.1mH
T
C
= 25 °C
T
C
= 100 °C
T
A
= 25 °C
T
A
= 70 °C
E
AS
P
D
mJ
W
Power Dissipation
P
D
T
j
, T
stg
W
°C
Operating Junction & Storage Temperature Range
REV 1.0
1
G-37-1
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PKCH2BB
PDFN 5x6P
Halogen-Free & Lead-Free
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
1
2
2
2
SYMBOL
R
JA
R
JA
R
JC
TYPICAL
MAXIMUM
25
40
1.2
UNITS
t
≦10s
Steady-State
Steady-State
°C / W
Pulse width limited by maximum junction temperature.
2
The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air
environment with T
A
=25°C.
3
The Power dissipation is based on R
JA
t
≦10s
value.
4
The maximum current rating is package limited.
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
1
Resistance
Forward Transconductance
1
LIMITS
UNIT
MIN TYP MAX
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 55 °C
V
GS
= 4.5V, I
D
= 20A
V
GS
= 10V, I
D
= 20A
V
DS
= 5V, I
D
= 20A
DYNAMIC
30
1.35
1.8
2.35
±100
1
10
1.2
0.85
123
1.5
0.99
V
nA
A
R
DS(ON)
g
fs
mΩ
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
2
C
iss
C
oss
C
rss
R
g
V
GS
= 10V
6151
V
GS
= 0V, V
DS
= 15V, f = 1MHz
1052
693
V
GS
= 0V, V
DS
= 0V, f = 1MHz
1.7
128
V
DS
= 15V , V
GS
= 10V,
I
D
= 20A
65
19.7
24
27
V
DS
= 15V ,
I
D
20A, V
GS
= 10V, R
GEN
=6Ω
49
171
90
nS
nC
Ω
pF
Q
g
2
V
GS
= 4.5V
Gate-Source Charge
Gate-Drain Charge
2
2
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
2
2
t
d(on)
t
r
Turn-Off Delay Time
Fall Time
2
t
d(off)
t
f
REV 1.0
2
G-37-1
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PKCH2BB
PDFN 5x6P
Halogen-Free & Lead-Free
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25 °C)
Continuous Current
Forward Voltage
1
I
S
V
SD
t
rr
Q
rr
I
F
= 20A, V
GS
= 0V
I
F
= 20A, dl
F
/dt = 100A /
S
46
36
104
1
A
V
nS
nC
Reverse Recovery Time
Reverse Recovery Charge
1
2
Pulse test : Pulse Width
300
sec,
Duty Cycle
2％.
Independent of operating temperature.
REV 1.0
3
G-37-1
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PKCH2BB
PDFN 5x6P
Halogen-Free & Lead-Free
Output Characteristics
30
30
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=3.1V
VGS=3V
Transfer Characteristics
I
D
, Drain-To-Source Current(A)
I
D
, Drain-To-Source Current(A)
24
24
18
18
12
VGS=2.9V
12
25℃
6
VGS=2.8V
6
125℃
-20℃
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
V
DS
, Drain-To-Source Voltage(V)
V
GS
, Gate-To-Source Voltage(V)
0.004
On-Resistance VS Gate-To-Source
Voltage
ID=20A
On-Resistance VS Drain Current
0.003
R
DS(ON)
ON-Resistance(OHM)
R
DS(ON)
ON-Resistance(OHM)
0.0032
0.0025
0.002
0.0024
0.0015
VGS=4.5V
0.0016
0.001
VGS=10V
0.0005
0.0008
0
2
4
6
8
10
0
0
6
12
18
24
30
V
GS
, Gate-To-Source Voltage(V)
I
D
, Drain-To-Source Current(A)
On-Resistance VS Temperature
2.0
7000
Capacitance Characteristic
6000
CISS
Normalized Drain to Source
ON-Resistance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
VGS=10V
ID=20A
C , Capacitance(pF)
5000
4000
3000
2000
1000
COSS
CRSS
0
0
5
10
15
20
25
30
T
J
, Junction Temperature(˚C)
V
DS
, Drain-To-Source Voltage(V)
REV 1.0
4
G-37-1
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PKCH2BB
PDFN 5x6P
Halogen-Free & Lead-Free
10
Gate charge Characteristics
Characteristics
VDS=15V
ID=20A
Source-Drain Diode Forward Voltage
100
V
GS
, Gate-To-Source Voltage(V)
8
I
S
, Source Current(A)
10
6
4
150℃
1
25℃
2
0
0
26
52
78
104
130
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Qg , Total Gate Charge(nC)
V
SD
, Source-To-Drain Voltage(V)
Safe Operating Area
1000
Operation in This
Area is Limited
by RDS(ON)
Single Pulse Maximum Power Dissipation
200
I
D
, Drain Current(A)
160
100
Single Pulse
RθJA = 40 ˚C/W
TA = 25˚C
Power(W)
120
10
1ms
10ms
1
NOTE :
1.VGS = 10V
2.TA = 25˚C
3.RθJA = 40 ˚C/W
4.Single Pulse
0.1
1
10
100ms
80
40
DC
100
0.1
0.01
0
0.001
0.01
0.1
1
10
100
V
DS
, Drain-To-Source Voltage(V)
Single Pulse Time(s)
Transient Thermal Response Curve
10
Transient Thermal Resistance
r(t) , Normalized Effective
1
Duty cycle=0.5
Notes
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
1.Duty cycle, D= t1 / t2
2.RthJA = 40
℃/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
T
1
, Square Wave Pulse Duration[sec]
REV 1.0
5
G-37-1
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