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P06P03LCG

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 3.5A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 45mΩ @ 3.5A, 10V Maximum power dissipation ( Ta=25°C): 780mW Type: P channel P channel -30V -3.5A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size319KB,5 Pages
ManufacturerNIKO-SEM
Websitehttp://www.niko-sem.com/
Download Datasheet Parametric View All

P06P03LCG Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 3.5A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 45mΩ @ 3.5A, 10V Maximum power dissipation ( Ta=25°C): 780mW Type: P channel P channel -30V -3.5A

P06P03LCG Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C3.5A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance45mΩ @ 3.5A,10V
Maximum power dissipation (Ta=25°C)780mW
typeP channel
P06P03LCG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V
(BR)DSS
-30V
R
DS(ON)
45mΩ @V
GS
= -10V
I
D
-3.5A
SOT-89
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ° Unless Otherwise Noted)
C
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
1
SYMBOL
V
DS
V
GS
LIMITS
-30
±20
-3.5
-2.8
-20
-19
18
0.78
0.5
-55 to 150
UNITS
V
T
A
= 25 °
C
T
A
= 70 °
C
I
D
I
DM
I
AS
A
L = 0.1mH
T
A
= 25 °
C
T
A
= 70 °
C
E
AS
P
D
T
J
, T
STG
mJ
W
°
C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1
2
SYMBOL
R
qJC
R
qJA
TYPICAL
MAXIMUM
18
160
UNITS
° /W
C
Pulse width limited by maximum junction temperature.
Duty cycle
1%.
Ver 1.0
1
2012/4/12
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