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BCP56,115

Description
Rated power: 1W Collector current Ic: 1.2A Collector-emitter breakdown voltage Vce: 80V Transistor type: NPN NPN, Vceo=80V, Ic=1A
CategoryDiscrete semiconductor    The transistor   
File Size1MB,22 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

BCP56,115 Overview

Rated power: 1W Collector current Ic: 1.2A Collector-emitter breakdown voltage Vce: 80V Transistor type: NPN NPN, Vceo=80V, Ic=1A

BCP56,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeSC-73
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Manufacturer packaging codeSOT223
Reach Compliance Codecompliant
Factory Lead Time4 weeks
Samacsys DescriptionNexperia BCP56,115 NPN Transistor, 1 A, 80 V, 4-Pin SOT-223
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
Rev. 9 — 25 October 2011
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BCP56
BCX56
BC56PA
[1]
Type number
[1]
PNP complement
JEITA
SC-73
SC-62
-
JEDEC
-
TO-243
-
BCP53
BCX53
BC53PA
SOT223
SOT89
SOT1061
Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Low-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
[1]
Pulse test: t
p
300
s; 
= 0.02.
Conditions
open base
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
[1]
[1]
[1]
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
80
1
2
250
160
250
Unit
V
A
A

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