1N4002SGP0G datasheet, PDF - EEWORLD Datasheet

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1N4002SGP0G: DescriptionRectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon; CategoryDiscrete semiconductor diode; File Size229KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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1N4002SGP0G Overview

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon

1N4002SGP0G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
package instruction	O-PALF-W2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY, LOW POWER LOSS
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-PALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	100 V
surface mount	NO
Terminal surface	Pure Tin (Sn)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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CREAT BY ART

1N4001SG - 1N4007SG

1.0 AMP. Glass Passivated Rectifiers

A-405

Features

Glass passivated chip junction

High efficiency, Low VF

High current capability

High reliability

High surge current capability

Low power loss

φ0.6mm

leads

Green compound with suffix "G" on packing

code & prefix "G" on datecode

Mechanical Data

Cases: Molded plastic

Epoxy: UL 94V-0 rate flame retardant

Lead: Pure tin plated, lead free, solderable per

MIL-STD-202, Method 208 guaranteed

Polarity: Color band denotes cathode

High temperature soldering guaranteed: 260℃/10s

Weight: 0.22 grams

Maximum Ratings and Electrical Characteristics

Rating at 25

℃

ambient temperature unless otherwise specified.

Parameter

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method)

Maximum Instantaneous Forward Voltage (Note 1)

@1A

Maximum DC Reverse Current at

Rated DC Blocking Voltage

Typical Thermal Resistance

Operating and Storage Temperature Range

Note1: Pulse Test with PW=300 usec, 1% Duty Cycle

@ T

=25

℃

@ T

=125℃

Symbol

RRM

RMS

F(AV)

FSM

θJA

, T

STG

4001SG 4002SG 4003SG 4004SG 4005SG 4006SG 4007SG

100

200

400

600

800

1000

100

140

200

280

400

1.0

100

- 55 to + 150

420

600

560

800

700

1000

Units

Typical Junction Capacitance (Note 2)

C/W

Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

Version:D13

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