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CSD16301Q2

Description
Drain-source voltage (Vdss): 25V Continuous drain current (Id) (at 25°C): 5A (Tc) Gate-source threshold voltage: 1.55V @ 250uA Drain-source on-resistance: 24mΩ @ 4A, 8V Maximum power consumption Dispersed (Ta=25°C): 2.3W Type: N channel N channel, 25V, 5A, 2.3W
CategoryDiscrete semiconductor    The transistor   
File Size439KB,14 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
Environmental Compliance
Stay tuned Parametric

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CSD16301Q2 Overview

Drain-source voltage (Vdss): 25V Continuous drain current (Id) (at 25°C): 5A (Tc) Gate-source threshold voltage: 1.55V @ 250uA Drain-source on-resistance: 24mΩ @ 4A, 8V Maximum power consumption Dispersed (Ta=25°C): 2.3W Type: N channel N channel, 25V, 5A, 2.3W

CSD16301Q2 Parametric

Parameter NameAttribute value
Brand NameTexas Instruments
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSON-6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID414059
Samacsys Pin Count8
Samacsys Part CategoryTransistor
Samacsys Package CategoryOther
Samacsys Footprint NameCSD16301Q2
Samacsys Released Date2017-02-24 10:46:49
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)10 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)5 A
Maximum drain current (ID)5 A
Maximum drain-source on-resistance0.034 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)17 pF
JESD-30 codeS-PDSO-N6
JESD-609 codee4
Humidity sensitivity level1
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.3 W
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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