TLP2361
Photocouplers
GaAℓAs Infrared LED & Photo IC
TLP2361
1. Applications
•
•
•
Factory Networking
High-Speed Digital Interfacing for Instrumentation and Control Devices
I/O Interface Boards
2. General
The Toshiba TLP2361 consists of a high-output GaAℓAs light-emitting diode coupled with integrated high gain,
high-speed photodetectors. It is housed in the SO6 package.
This photocoupler guarantees operation at up to 125
and on supplies from 2.7 V to 5.5 V. Since TLP2361 has
guaranteed 1 mA low supply current (I
CCL
/I
CCH
), and 1.6 mA (T
a
= 125
)
low threshold input current(I
FHL
), it
contributes to energy saving of devices. It can drive directly from a microcomputer for a low input current.
The TLP2361 has an internal Faraday shield that provides a guaranteed common-mode transient immunity of
±20
kV/µs.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Inverter logic type (Totem pole output)
Package: SO6
Operating temperature: -40 to 125
Supply voltage: 2.7 to 5.5 V
Data transfer rate: 15 MBd (typ.) (NRZ)
Threshold input current: 1.3 mA (max) (@T
a
= 105
)
: 1.6 mA (max) (@T
a
= 125
)
Supply current: 1.0 mA (max)
Common-mode transient immunity:
±20
kV/µs (min)
Isolation voltage: 3750 Vrms (min)
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5 (Note 1)
CQC-approved: GB4943.1, GB8898 Thailand Factory
(10) Safety standards
Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (V4)
(V4).
Start of commercial production
©2015 Toshiba Corporation
1
2013-06
2015-11-02
Rev.5.0
TLP2361
4. Packaging and Pin Configuration
1: Anode
3: Cathode
4: GND
5: V
O
(Output)
6: V
CC
11-4L1S
5. Internal Circuit (Note)
Note:
A 0.1-µF bypass capacitor must be connected between pin 6 and pin 4.
6. Principle of Operation
6.1. Truth Table
Input
H
L
LED
ON
OFF
Output
L
H
6.2. Mechanical Parameters
Characteristics
Creepage distances
Clearance distances
Internal isolation thickness
Min
5.0
5.0
0.4
Unit
mm
©2015 Toshiba Corporation
2
2015-11-02
Rev.5.0
TLP2361
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Input forward current (pulsed)
Input forward current derating (pulsed)
Peak transient input forward current
Peak transient input forward current
derating
Input power dissipation
Input power dissipation derating
Input reverse voltage
Detector Output current
Output voltage
Supply voltage
Output power dissipation
Output power dissipation derating
Common Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
(10 s)
AC, 60 s., R.H.
≤
60 %
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
110
)
Symbol
I
F
∆I
F
/∆T
a
I
FP
∆I
FP
/∆T
a
I
FPT
∆I
FPT
/∆T
a
P
D
∆P
D
/∆T
a
V
R
I
O
V
O
V
CC
P
O
∆P
O
/∆T
a
T
opr
T
stg
T
sol
BV
S
(Note 3)
(Note 2)
(Note 1)
Note
Rating
10
-0.13
40
-1.0
1
-25
20
-0.5
5
10
6
6
20
-0.5
-40 to 125
-55 to 125
260
3750
Vrms
mW
mW/
Unit
mA
mA/
mA
mA/
A
mA/
mW
mW/
V
mA
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW)
≤
1 ms, duty = 50 %
Note 2: Pulse width (PW)
≤
1
µs,
300 pps
Note 3: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are
shorted together.
8. Recommended Operating Conditions (Note)
Characteristics
Input on-state current
Input off-state voltage
Supply voltage
Operating temperature
Symbol
I
F(ON)
V
F(OFF)
V
CC
T
opr
(Note 2)
(Note 2)
Note
(Note 1)
Min
2
0
2.7
-40
Typ.
3.3/5.0
Max
6
0.8
5.5
125
Unit
mA
V
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this datasheet should also be considered.
Note: A ceramic capacitor (0.1
µF)
should be connected between pin 6 and pin 4 to stabilize the operation of a high-
gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be
placed within 1 cm of each pin.
Note 1: The rise and fall times of the input on-current should be less than 0.5
µs.
Note 2: Denotes the operating range, not the recommended operating condition.
Note:
©2015 Toshiba Corporation
3
2015-11-02
Rev.5.0
TLP2361
9. Electrical Characteristics (Note)
(Unless otherwise specified, T
a
= -40 to 125
, V
CC
= 2.7 to 5.5 V)
Characteristics
Input forward voltage
Input forward voltage
temperature coefficient
Input reverse current
Input capacitance
Low-level output voltage
High-level output voltage
Symbol
V
F
∆V
F
/∆T
a
I
R
C
t
V
OL
V
OH
Note
Test
Circuit
Fig.
12.1.1
Fig.
12.1.2
Test Condition
I
F
= 2 mA, T
a
= 25
I
F
= 2 mA
V
R
= 5 V, T
a
= 25
V = 0 V, f = 1 MHz, T
a
= 25
I
F
= 2 mA, I
O
= 20
µA
I
F
= 2 mA, I
O
= 3.2 mA
I
O
= -20
µA,
V
F
= 0.8 V,
V
CC
= 3.3 V
I
O
= -20
µA,
V
F
= 0.8 V,
V
CC
= 5 V
I
O
= -3.2 mA, V
F
= 0.8 V,
V
CC
= 3.3 V
I
O
= -3.2 mA, V
F
= 0.8 V,
V
CC
= 5 V
Low-level supply current
High-level supply current
Threshold input current (H/L)
I
CCL
I
CCH
I
FHL
Fig.
12.1.3
Fig.
12.1.4
I
F
= 2 mA
I
F
= 0 mA
I
O
= 3.2 mA, V
O
< 0.4 V,
T
a
= -40 to 105
I
O
= 3.2 mA, V
O
< 0.4 V,
T
a
= -40 to 125
Min
1.35
3.2
4.9
2.3
4.0
Typ.
1.50
-2.0
20
0.12
3.29
4.99
3.15
4.87
0.65
0.65
0.5
0.5
Max
1.65
10
0.1
0.4
1.0
1.0
1.3
1.6
mA
Unit
V
mV/
µA
pF
V
Note:
All typical values are at V
CC
= 5 V, T
a
= 25
,
unless otherwise noted.
10. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Condition
Min
1
×
10
12
3750
Typ.
0.8
10
14
10000
10000
Max
Vdc
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, R.H.
≤
60 %
(Note 1) AC, 60 s
AC, 1 s in oil
DC, 60 s in oil
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are
shorted together.
©2015 Toshiba Corporation
4
2015-11-02
Rev.5.0
TLP2361
11. Switching Characteristics (Note)
(Unless otherwise specified, T
a
= -40 to 125
, V
CC
= 2.7 to 5.5 V)
Characteristics
Propagation delay time (H/L)
Propagation delay time (L/H)
Pulse width distortion
Propagation delay skew
(device to device)
Fall time
Rise time
Common-mode transient
immunity at output high
Symbol
t
pHL
t
pLH
Note
Test
Circuit
Test Condition
Min
-30
Typ.
49
39
10
Max
80
80
25
30
Unit
ns
(Note 1),
Fig. I
F
= 0
→
2 mA, R
T
= 1.68 kΩ,
(Note 3) 12.1.5 C
L
= 15 pF
(Note 1),
(Note 3)
I
F
= 2
→
0 mA, R
T
= 1.68 kΩ,
C
L
= 15 pF
I
F
= 2 mA, R
T
= 1.68 kΩ,
C
L
= 15 pF
I
F
= 2 mA, R
T
= 1.68 kΩ,
C
L
= 15 pF
I
F
= 0
→
2 mA, R
T
= 1.68 kΩ,
C
L
= 15 pF
I
F
= 2
→
0 mA, R
T
= 1.68 kΩ,
C
L
= 15 pF
Fig. V
CM
= 1000 V
p-p
,
12.1.6 I
F
= 0 mA, V
CC
= 3.3 V / 5 V,
T
a
= 25
,
R
T
= 1.68 kΩ
V
CM
= 1000 V
p-p
,
I
F
= 2 mA, V
CC
= 3.3 V / 5 V,
T
a
= 25
,
R
T
= 1.68 kΩ
|t
pHL
-t
pLH
| (Note 1),
(Note 3)
t
psk
(Note 1),
(Note 2),
(Note 3)
(Note 1),
(Note 3)
(Note 1),
(Note 3)
(Note 3)
t
f
t
r
CM
H
±20
3
3
±25
kV/µs
Common-mode transient
immunity at output low
CM
L
(Note 3)
±20
±25
Note: All typical values are at T
a
= 25
.
Note 1: f = 5 MHz, duty = 50 %, input current t
r
= t
f
= 5 ns, C
L
is approximately 15 pF which includes probe and stray
wiring capacitance.
Note 2: The propagation delay skew, t
psk
, is equal to the magnitude of the worst-case difference in t
pHL
and/or t
pLH
that will be seen between units at the same given conditions (supply voltage, input current, temperature, etc).
Note 3: R
T
= R
1
+ R
2
= 1.68 kΩ
Recommendation input resistance conditions : R
1
= R
2
= 840
Ω
©2015 Toshiba Corporation
5
2015-11-02
Rev.5.0
京公网安备 11010802033920号
EEWORLD
