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TLP291(GR-TP,SE(T

Description
Input type: DC Number of channels: 1 Isolation voltage: 3750Vrms Product type: Transistor output
CategoryLED optoelectronic/LED    The light coupling   
File Size474KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

TLP291(GR-TP,SE(T Overview

Input type: DC Number of channels: 1 Isolation voltage: 3750Vrms Product type: Transistor output

TLP291(GR-TP,SE(T Parametric

Parameter NameAttribute value
data rate-
input typeDC
Supply voltage-
Number of channels1
Isolation voltage3750Vrms
Output voltage (maximum)80V
Output current(Max)50mA
TLP291(SE
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
TLP291(SE
Power Supplies
Programmable Controllers
Hybrid ICs
TLP291(SE consists of photo transistor optically coupled to a gallium
arsenide infrared emitting diode.
TLP291(SE is housed in the SO4 package, very small and thin coupler.
Since TLP291(SE is guaranteed wide operating temperature (Ta=-55 to
110 ˚C) and high isolation voltage (3750Vrms), it’s suitable for high-density
surface mounting applications such as small switching power supplies and
programmable controllers.
Collector-Emitter Voltage
Current Transfer Ratio
Rank GB
: 80 V (min)
: 50% (min)
: 100% (min)
TOSHIBA
11-3C1
Weight: 0.05 g (typ.)
Unit: mm
Isolation Voltage
: 3750 Vrms (min)
Operation temperature: -55 to 110 ˚C
UL recognized
cUL approved
SEMKO conformity
BSI conformity
: UL1577, File No. E67349
: CSA Component Acceptance Service No.5A,
F ile No. E67349
: EN 60065: 2002,
EN 60950-1: 2001, EN 60335-1: 2002,
: BS EN 60065: 2002,
BS EN 60950-1: 2006
Pin Configuration
TLP291
1
2
4
3
1:ANODE
2:CATHODE
3:EMITTER
4:COLLECTOR
VDE conformity: EN 60747-5-5
Construction Mechanical Rating
Creepage distance: 5.0mm(min)
Clearance: 5.0mm(min)
Insulation thickness: 0.4mm(min)
1
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