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SSM3K17FU,LF

Description
Drain-source voltage (Vdss): 50V Continuous drain current (Id) (at 25°C): 100mA Gate-source threshold voltage: 1.5V @ 1uA Drain-source on-resistance: 20Ω @ 10mA, 4V Maximum power dissipation (Ta =25°C): 150mW Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size171KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

SSM3K17FU,LF Overview

Drain-source voltage (Vdss): 50V Continuous drain current (Id) (at 25°C): 100mA Gate-source threshold voltage: 1.5V @ 1uA Drain-source on-resistance: 20Ω @ 10mA, 4V Maximum power dissipation (Ta =25°C): 150mW Type: N-channel

SSM3K17FU,LF Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)50V
Continuous drain current (Id) at 25°C100mA
Gate-source threshold voltage1.5V @ 1uA
Drain-source on-resistance20Ω @ 10mA,4V
Maximum power dissipation (Ta=25°C)150mW
typeN channel
SSM3K17FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K17FU
High Speed Switching Applications
Analog Switch Applications
Suitable for high-density mounting due to compact package
High drain-source voltage
High speed switching
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
50
±7
100
200
150
150
−55
to 150
Unit
V
V
mA
mW
°C
°C
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
high temperature/current/voltage and the significant change in
JEITA
SC-70
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2E1E
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 6 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm × 3)
0.6 mm
1.0 mm
Marking
3
Equivalent Circuit
3
DM
1
2
1
2
This transistor is a electrostatic sensitive device. Please handle with caution.
Start of commercial production
2001-09
1
2014-03-01

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Description Drain-source voltage (Vdss): 50V Continuous drain current (Id) (at 25°C): 100mA Gate-source threshold voltage: 1.5V @ 1uA Drain-source on-resistance: 20Ω @ 10mA, 4V Maximum power dissipation (Ta =25°C): 150mW Type: N-channel Small Signal Field-Effect Transistor Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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