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TLP626(BV,F)

Description
Input type: AC, DC Number of channels: 1 Isolation voltage: 5000Vrms Product type: Transistor output
CategoryLED optoelectronic/LED    photoelectric   
File Size285KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

TLP626(BV,F) Overview

Input type: AC, DC Number of channels: 1 Isolation voltage: 5000Vrms Product type: Transistor output

TLP626(BV,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
Reach Compliance Codeunknown
Current transmission ratio - minimum value100%
Maximum forward current0.06 A
Maximum forward voltage1.3 V
Maximum insulation voltage5000 V
Installation featuresTHROUGH HOLE MOUNT
Number of components1
Maximum on-state current0.05 A
Maximum operating temperature75 °C
Minimum operating temperature-25 °C
Maximum power dissipation0.15 W
surface mountNO
TLP626,TLP626-2,TLP626-4
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP626, TLP626-2, TLP626-4
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA TLP626,
−2
and
−4
consist of gallium arsenide infrared
emitting diodes connected in inverse parallel, optically coupled to a
photo−transistor.
The TLP626−2 offers two isolated channels in an eight lead plastic DIP,
while the TLP626−4 provides four isolated channels in a sixteen plastic
DIP.
Collector−emitter voltage: 55V (min)
Current transfer ratio
Current Transfer Ratio (min)
Classification
Ta = 25°C
I
F
= ±1mA
V
CE
= 0.5V
Rank BV
Standard
200%
100%
I
F
= ±0.5mA
V
CE
= 1.5V
100%
50%
Ta =
−25~75°C
I
F
= ±1mA
V
CE
= 0.5V
100%
50%
Marking
of
Classification
BV
BV, blank
Unit: mm
TOSHIBA
Weight: 0.26 g (typ.)
11−5B2
Isolation voltage: 5000V
rms (
min)
UL recognized: UL1577, file no.E67349
BSI approved: BS EN60065: 2002 certificate no.7426
BS EN60950-1: 2002 certificate no.7427
Note: Application type name for certification test,
please use standard product type name, i.e.
TLP626(BV): TLP626
Pin Configuration (top view)
TLP626
TLP626
2
TLP626
4
TOSHIBA
11−10C4
Weight: 0.54 g (typ.)
1
2
1 : Anode
Cathode
2 : Cathode
Anode
3 : Emitter
4 : Collector
4
3
1
2
3
4
1, 3 : Anode
Cathode
2, 4 : Cathode
Anode
5, 7 : Emitter
6, 8 : Collector
8
7
6
5
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
TOSHIBA
Weight: 1.1 g (typ.)
11−20A3
1, 3, 5, 7
: Anode, Cathode
2, 4, 6, 8
: Cathode, Anode
9, 11, 13, 15 : Emitter
10, 12, 14, 16 : Collector
Start of commercial production
1984/04
1
2014-09-22

TLP626(BV,F) Related Products

TLP626(BV,F) TLP626-2(F) TLP626-4(F) TLP626(F)
Description Input type: AC, DC Number of channels: 1 Isolation voltage: 5000Vrms Product type: Transistor output optoisolator 5kv 2ch trans 8-dip optoisoltr 5kv 4ch trans 16-dip Input type: AC, DC Number of channels: 1 Isolation voltage: 5000Vrms Product type: Transistor output
Is it Rohs certified? conform to conform to conform to conform to
Reach Compliance Code unknown unknow unknow unknown
Maximum forward current 0.06 A 0.05 A 0.05 A 0.02 A
Maximum insulation voltage 5000 V 5000 V 5000 V 5000 V
Number of components 1 2 4 1
Maximum operating temperature 75 °C 75 °C 75 °C 75 °C
Minimum operating temperature -25 °C -25 °C -25 °C -25 °C
Maker Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor -
Current transmission ratio - minimum value 100% 50% 50% -
Maximum forward voltage 1.3 V 1.3 V 1.3 V -
Installation features THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT -
Maximum on-state current 0.05 A 0.05 A 0.05 A -
Maximum power dissipation 0.15 W 0.1 W 0.1 W -
surface mount NO NO NO -

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