TLP626,TLP626-2,TLP626-4
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP626, TLP626-2, TLP626-4
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA TLP626,
−2
and
−4
consist of gallium arsenide infrared
emitting diodes connected in inverse parallel, optically coupled to a
photo−transistor.
The TLP626−2 offers two isolated channels in an eight lead plastic DIP,
while the TLP626−4 provides four isolated channels in a sixteen plastic
DIP.
•
Collector−emitter voltage: 55V (min)
•
Current transfer ratio
Current Transfer Ratio (min)
Classification
Ta = 25°C
I
F
= ±1mA
V
CE
= 0.5V
Rank BV
Standard
200%
100%
I
F
= ±0.5mA
V
CE
= 1.5V
100%
50%
Ta =
−25~75°C
I
F
= ±1mA
V
CE
= 0.5V
100%
50%
Marking
of
Classification
BV
BV, blank
Unit: mm
TOSHIBA
Weight: 0.26 g (typ.)
11−5B2
•
•
•
•
Isolation voltage: 5000V
rms (
min)
UL recognized: UL1577, file no.E67349
BSI approved: BS EN60065: 2002 certificate no.7426
BS EN60950-1: 2002 certificate no.7427
Note: Application type name for certification test,
please use standard product type name, i.e.
TLP626(BV): TLP626
Pin Configuration (top view)
TLP626
TLP626
–
2
TLP626
–
4
TOSHIBA
11−10C4
Weight: 0.54 g (typ.)
1
2
1 : Anode
Cathode
2 : Cathode
Anode
3 : Emitter
4 : Collector
4
3
1
2
3
4
1, 3 : Anode
Cathode
2, 4 : Cathode
Anode
5, 7 : Emitter
6, 8 : Collector
8
7
6
5
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
TOSHIBA
Weight: 1.1 g (typ.)
11−20A3
1, 3, 5, 7
: Anode, Cathode
2, 4, 6, 8
: Cathode, Anode
9, 11, 13, 15 : Emitter
10, 12, 14, 16 : Collector
Start of commercial production
1984/04
1
2014-09-22
TLP626,TLP626-2,TLP626-4
Absolute Maximum Ratings
(Ta = 25°C)
Rating
Characteristic
Forward current
Forward current derating
LED
Pulse forward current
Power dissipation (1 circuit)
Power dissipation derating (Ta
≥
25°C, 1 circuit)
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Detector
Collector current
Collector power dissipation (1 circuit)
Collector power dissipation derating
(Ta
≥
25°C, 1 circuit)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation (1 circuit)
Total package power dissipation derating (Ta
≥
25°C, 1 circuit)
Isolation voltage
(Note 1)
Symbol
I
F
∆I
F
/ °C
I
FP
P
D
∆P
D
/ °C
T
j
V
CEO
V
ECO
I
C
P
C
∆P
C
/ °C
T
j
T
stg
P
opr
T
sol
P
T
∆P
T
/ °C
BV
S
250
−2.5
150
−1.5
125
−55
to 125
−55
to 100
260 (10s)
150
−1.5
TLP626
60
−0.7
(Ta
≥
39°C)
TLP626−2
TLP626−4
50
−0.5
(Ta
≥
39°C)
Unit
mA
mA / °C
A
mW
mW / °C
°C
V
V
mA
100
−1.0
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
Vrms
1 (100μs pulse,100pps)
100
−1.0
125
55
7
50
70
−0.7
5000 (AC, 1minute, R.H.≤60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F(RMS)
I
C
T
opr
Min
―
―
―
−25
Typ.
5
1.6
1
―
Max
24
20
10
75
Unit
V
mA
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2014-09-22
TLP626,TLP626-2,TLP626-4
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector−emitter breakdown voltage
Detector
Emitter−collector breakdown voltage
Collector dark current
Capacitance collector to emitter
Symbol
V
F
I
F
C
T
V
(BR)CEO
V
(BR)ECO
I
CEO
C
CE
Test Condition
I
F
= ±10mA
V
F
= ±0.7V
V = 0, f = 1MHz
I
C
= 0.5mA
I
E
= 0.1mA
V
CE
= 24V
V
CE
= 24V, Ta = 85°C
V=0, f=1MHz
Min
1.0
―
―
55
7
―
―
―
Typ.
1.15
2.5
60
―
―
10
2
12
Max
1.3
20
―
―
―
100
50
―
Unit
V
μA
pF
V
V
nA
μA
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
I
C
/ I
F
Test Condition
I
F
= ±1mA, V
CE
= 0.5V
rank BV
I
F
= ±0.5mA, V
CE
= 1.5V
rank BV
I
C
= 0.5mA, I
F
= ±1mA
Collector−emitter saturation voltage
V
CE(sat)
I
C
= 1mA, I
F
= ±1mA
rank BV
Off−state collector current
CTR symmetry *1
I
C
(off)
I
C
(ratio)
V
F
= ±0.7V, V
CE
= 24V
I
C
(I
F
=
−1mA)
/ I
C
(I
F
= 1mA)
Min
100
200
50
100
―
―
―
―
0.5
Typ.
―
―
―
―
―
0.2
―
1
―
Max
1200
1200
―
―
0.4
―
0.4
10
2
μA
―
V
Unit
%
Low input CTR
I
C
/ I
F
(low)
%
Coupled Electrical Characteristics
(Ta =
−
25½75°C)
Characteristic
Current transfer ratio
Symbol
I
C
/ I
F
Test Condition
I
F
= 1mA, V
CE
= 0.5V
rank BV
I
F
= 0.5mA, V
CE
= 1.5V
rank BV
Min
50
100
―
―
Typ.
―
―
50
100
Max
―
―
―
―
Unit
%
Low input CTR
I
C
/ I
F
(low)
%
*1
I
C1
I (I
=
I
V
=
5 V)
I
C(ratio) =
C2 F F2, CE
IC1(IF
=
IF1, VCE
=
5 V)
I
F1
I
F2
I
C2
V
CE
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2014-09-22
TLP626,TLP626-2,TLP626-4
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0, f = 1MHz
V
S
= 500V
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min
―
5×10
10
Typ.
0.8
10
14
Max
―
―
―
―
―
Unit
pF
Ω
Vrms
Vdc
5000
―
―
―
10000
10000
Switching Characteristics
(Ta = 25°C)
Characteristic
Rise time
Fall time
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
Symbol
t
r
t
f
t
on
t
off
t
ON
t
s
t
OFF
R
L
= 4.7kΩ (Fig.1)
V
CC
= 5 V, I
F
= ±1.6mA
V
CC
= 10V, I
C
= 2mA
R
L
= 100Ω
Test Condition
Min
―
―
―
―
―
―
―
Typ.
8
8
10
8
10
50
300
Max
―
―
―
―
―
―
―
μs
μs
Unit
Fig. 1 Switching operating conditions
I
F
t
S
V
CE
V
CC
4.5V
0.5V
t
ON
t
OFF
I
F
V
CC
R
L
V
CE
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2014-09-22
TLP626,TLP626-2,TLP626-4
I
F
– T
a
100
200
P
C
– T
a
80
160
TLP626
Allowable forward current
IF
(RMS)
(mA)
TLP626
60
TLP626-2,
-4
Allowable collector power
dissipation PC (mW)
120
TLP626-2,
-4
40
80
20
40
0
-20
0
20
40
60
80
100
120
0
-20
0
20
40
60
80
100
120
Ambient temperature
Ta (°C)
Ambient temperature
Ta (°C)
I
FP
– D
R
5000
3000
Pulse width
≤
100
μs
Ta = 25 °C
100
50
30
1000
500
300
Ta = 25 °C
I
F
– V
F
Allowable pulse forward current
IFP (mA)
(mA)
10
Forward current IF
10
-
3
5
3
100
50
30
1
0.5
0.3
0.1
0.4
10
3
3
10
-
2
3
10
-
1
3
10
0
06
0.8
1.0
1.2
1.4
1.6
Duty cycle ratio
D
R
Forward voltage
V
F
(V)
∆V
F
/
∆T
a
– I
F
1000
I
FP
– V
FP
I
FP
(mA)
Pulse width
≦
10
μs
500 Repetitive
300 Frequency = 100 Hz
Ta = 25 °C
100
50
30
-2.8
Forward voltage temperature
coefficient
∆V
F
/∆T
a
(mV/°C)
-2.4
-2.0
-1.6
Pulse forward current
50
-1.2
10
5
3
-0.8
-0.4
0.1
0.3 0.5
1
3
5
10
30
1
0
0.4
0.8
1.2
1.6
2.0
2.4
Forward current
I
F
(mA)
Pulse forward voltage
V
FP
(V)
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2014-09-22