SSM3J325F,LF datasheet, PDF - EEWORLD Datasheet

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SSM3J325F,LF: DescriptionDrain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2A Drain-source on-resistance: 150mΩ @ 1A, 4.5V Maximum power dissipation (Ta=25°C): 600mW Type: P channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size254KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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SSM3J325F,LF Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2A Drain-source on-resistance: 150mΩ @ 1A, 4.5V Maximum power dissipation (Ta=25°C): 600mW Type: P channel

SSM3J325F,LF Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	20V
Continuous drain current (Id) at 25°C	2A
Drain-source on-resistance	150mΩ @ 1A,4.5V
Maximum power dissipation (Ta=25°C)	600mW
type	P channel

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SSM3J325F

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)

SSM3J325F

○

Power Management Switch Applications

Unit: mm

•

1.5-V drive

Low ON-resistance: R

DS(ON)

= 311 mΩ (max) (@V

= -1.5 V)

DS(ON)

= 231 mΩ (max) (@V

= -1.8 V)

DS(ON)

= 179 mΩ (max) (@V

= -2.5 V)

DS(ON)

= 150 mΩ (max) (@V

= -4.5 V)

+0.5

2.5-0.3

+0.25

1.5-0.15

0.95 0.95

2.9±0.2

0.3

Absolute Maximum Ratings

(Ta = 25°C)

Drain-source voltage

Gate-source voltage

Drain current

Power dissipation

Channel temperature

Storage temperature range

Pulse

DSS

GSS

(Note 1)

(Note 2)

t = 1s

stg

-20

-2.0

-4.0

600

1200

150

−55

to 150

°C

+0.2

1.1-0.1

1.9

Characteristic

Symbol

Rating

Unit

S-MINI

JEDEC

1.Gate

2.Source

3.Drain

TO-236MOD

Note: Using continuously under heavy loads (e.g. the application of high

JEITA

SC-59

temperature/current/voltage and the significant change in

TOSHIBA

2-3F1F

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

Weight: 12 mg (typ.)

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: The channel temperature should not exceed 150°C during use.

Note 2: Mounted on a FR4 board.

(25.4 mm

25.4 mm

1.6 mm, Cu Pad: 645 mm

)

Marking

Equivalent Circuit

KFE

Start of commercial production

0~0.1

2010-01

2016-11-10

+0.1

0.16-0.06

+0.1

0.4-0.05

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